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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한양대학교 세라믹공정연구센터 Journal of Ceramic Processing Research Journal of Ceramic Processing Research 제19권 제4호
- 발행연도
- 2018.8
- 수록면
- 302 - 305 (4page)
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초록· 키워드
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In this study, K(Ta0.60Nb0.40)O3 (KTN) thin films were prepared by the spin-coating method on Pt(111)/Ti/SiO2/Si substratesand varying sintering temperature. KTN coating solutions were synthesized by sol-gel method using metal alkoxide materials.
As a result of DTA analysis, an exothermic peak for the crystallization reaction was observed in the temperature range of from700 oC to 750 oC. KTN thin films sintered at 700-750 oC showed the typical XRD patterns of a polycrystalline perovskitestructure. The thickness of the KTN was approximately 203 nm. The dielectric constant and dielectric loss at 1 kHz of the KTNfilms sintered at 750 oC were 200, 0.08, respectively. Remnant polarization decreased with increasing the temperature, and thevalue of thin film sintered at 750 oC was 0.18 μC/cm2 at room temperature. The maximum electrocaloric temperature changeΔT of the thin film sintered at 750 oC was about 1.04 oC under a field of 400 kV/cm at 25 oC.
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