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자료유형
학술저널
저자정보
Seonha Park (Pusan National University) Mingi Choi (Pusan National University) Seokjun Kim (Pusan National University) Songkil Kim (Pusan National University)
저널정보
한국트라이볼로지학회 Tribology and Lubricants Tribology and Lubricants 제38권 제6호
발행연도
2022.12
수록면
235 - 240 (6page)

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Atomically-thin 2D nanomaterials can be easily deformed and have surface corrugations which can influence the frictional characteristics of the 2D nanomaterials. Chemical vapor deposition (CVD) graphene can be grown in a wafer scale, which is suitable as a large-area surface coating film. The CVD growth involves cooling process to room temperature, and the thermal expansion coefficients mismatch between graphene and the metallic substrate induces a compressive strain in graphene, resulting in the surface corrugations such as wrinkles and atomic ripples. Such corrugations can induce the friction anisotropy of graphene, and therefore, accurate imaging of the surface corrugation is significant for better understanding about the friction anisotropy of CVD graphene. In this work, the combinatorial analysis using friction force microscopy (FFM) and transverse shear microscopy (TSM) was implemented to unveil the friction anisotropy of CVD bi-layer graphene. The periodic friction anisotropy of the wrinkles was measured following a sinusoidal curve depending on the angles between the wrinkles and the scanning tip, and the two domains were observed to have the different friction signals due to the different directions of the atomic ripples, which was confirmed by the high-resolution FFM and TSM imaging. In addition, we revealed that the atomic ripples can be easily suppressed by ironing the surface during AFM scans with an appropriate normal force. This work demonstrates that the friction anisotropy of CVD bilayer graphene is well-correlated with the corrugated structures and the local friction anisotropy induced by the atomic ripples can be controllably removed by simple AFM scans.

목차

Abstract
1. Introduction
2. Experimental Method
3. Results
4. Conclusion
References

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