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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2020.10
- 수록면
- 428 - 433 (6page)
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초록· 키워드
오류제보하기
Recently, the on-chip autofocus (AF) function has become essential to the CMOS image sensor. An auto-focus usually operates using phase detection of the photocurrent difference from a pair of AF pixels that have focused or defocused. However, the phase-detection method requires a pair of AF pixels for comparison of readout. Therefore, the pixel variation may reduce AF performance. In this paper, we propose a color-selective AF pixel with a plasmonic nanostructure in a 0.9 μ㎡ pixel. The suggested AF pixel requires one pixel for AF function. The plasmonic nanostructure uses metal-insulator-metal (MIM) stack arrays instead of a color filter (CF). The color filters are formed at the subwavelength, and they transmit the specific wavelength of light according to the stack period and incident angles. For the optical analysis of the pixel, a finite-difference time-domain (FDTD) simulation was conducted. The analysis showed that the MIM stack arrays in the pixels perform as an AF pixel. As the primary metric of AF performance, the resulting AF contrasts are 1.8 for the red pixels, 1.6 for green, and 1.5 blue. Based on the simulation results, we confirmed the autofocusing performance of the MIM stack arrays.
목차
Ⅰ. INTRODUCTION
Ⅱ. CONCEPT OF THE AF PIXEL WITH MIM STRUCTURES
Ⅲ. SIMULATED RESULTS AND DISCUSSION
Ⅳ. CONCLUSIONS
REFERENCES
참고문헌 (20)
참고문헌 신청
S. Uchiyama / Superiority of image plane phase detection AF, ITE Technical Report, 36 / J-Stage
H. Endo / 2011 / "Phase detection pixel built-in image sensor" to realize high speed auto focus / J. Inst. Image Inf. Telev. Eng 65:290~292
M. Kobayashi / 2016 / A low noise and high sensitivity image sensor with imaging and phase-difference detection AF in all pixels / ITE Trans. Media Technol. Appl 4:123~128
A. Morimitsu / 2015 / A 4M p ixel f ull-PDAF CMOS image sensor with 1. 58 μm 2×1 On-Chip Micro-Split-Lens technology / ITE Tech. Rep 39:5~8
S. Choi / 2017 / An all pixel PDAF CMOS image sensor with 0.64 μm × 1.28 μm photodiode separated by self-aligned in-pixel deep trench isolation for high AF performance / Proc. Symposium on VLSI Technology :T104~T105
H. Endo / 2011 / "Phase detection pixel built-in image sensor" to realize high speed auto focus / J. Inst. Image Inf. Telev. Eng 65:290~292
M. Kobayashi / 2016 / A low noise and high sensitivity image sensor with imaging and phase-difference detection AF in all pixels / ITE Trans. Media Technol. Appl 4:123~128
A. Morimitsu / 2015 / A 4M p ixel f ull-PDAF CMOS image sensor with 1. 58 μm 2×1 On-Chip Micro-Split-Lens technology / ITE Tech. Rep 39:5~8
S. Choi / 2017 / An all pixel PDAF CMOS image sensor with 0.64 μm × 1.28 μm photodiode separated by self-aligned in-pixel deep trench isolation for high AF performance / Proc. Symposium on VLSI Technology :T104~T105
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