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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2022.10
- 수록면
- 1,567 - 1,570 (4page)
이용수
초록· 키워드
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This paper, we presents a RF protection technique of antenna switch by improving the power handling capability in worst case environment mode for mobile phone applications without critical payment of circuit performances such as insertion loss, isolation and ACBV (AC breakdown voltage). By applying a additional capacitive path located in front of the antenna in cell-phone, it performs the effective reduction of input power in high voltage standing wave ratio (VSWR) condition. Under the all-path off condition which causes a high VSWR, it achieved 37.7dBm power handling level as high as 5.7dB compared to that of conventional one at 2GHz. In addition, insertion loss and isolation performances were 0.31dB and 42.72dB at 2 GHz, respectively which were almost similar to that of the conventional circuit. The proposed antenna switch was fabricated in 130nm CMOS SOI technology.
목차
ABSTRACT
Ⅰ. Introduction
Ⅱ. Circuit Design of Antenna switch with RF protection technique
Ⅲ. Experimental Results
Ⅳ. Conclusion
REFERENCES
참고문헌 (7)
참고문헌 신청
F. Balteanu. “Linear Front End Module for 4G/5G LTE Advanced Applications” in Proceedings of IEEE 48th European Microwave Conference, Madrid, Spain, pp. 251-254, 2018.
C. Hill and J. F. Buckwalter, "Broadband, High-Linearity Switches for Millimeter-Wave Mixers Using Scaled SOI CMOS," IEEE Open Journal of the Solid-State Circuits Society, vol. 2, pp. 61 - 72, Aug. 2022.
G. Tochou, A. Cathelin, A. Frappé, A. Kaiser, and J. Rabaey, "Impact of Forward Body-Biasing on Ultra-Low Voltage Switched-Capacitor RF Power Amplifier in 28 nm FD-SOI", IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 69, no. 1, pp. 50-54, Jan. 2022.
A. Eltaliawy and J. R. Long, "A Broadband, mm-Wave SPST Switch With Minimum 50-dB Isolation in 45-nm SOI-CMOS," IEEE Transactions on Microwave Theory and Techniques, vol. 69, no. 6, pp. 2899-2906, Jun. 2021.
Venkata N.K Malladi and M. Miller, "A 48 dBm peak power RF switch in SOI process for 5G mMIMO applications," in Proceedings of 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Orlando: FL, USA, pp. 1-3, 2019.
C. Hill and J. F. Buckwalter, "Broadband, High-Linearity Switches for Millimeter-Wave Mixers Using Scaled SOI CMOS," IEEE Open Journal of the Solid-State Circuits Society, vol. 2, pp. 61 - 72, Aug. 2022.
G. Tochou, A. Cathelin, A. Frappé, A. Kaiser, and J. Rabaey, "Impact of Forward Body-Biasing on Ultra-Low Voltage Switched-Capacitor RF Power Amplifier in 28 nm FD-SOI", IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 69, no. 1, pp. 50-54, Jan. 2022.
A. Eltaliawy and J. R. Long, "A Broadband, mm-Wave SPST Switch With Minimum 50-dB Isolation in 45-nm SOI-CMOS," IEEE Transactions on Microwave Theory and Techniques, vol. 69, no. 6, pp. 2899-2906, Jun. 2021.
Venkata N.K Malladi and M. Miller, "A 48 dBm peak power RF switch in SOI process for 5G mMIMO applications," in Proceedings of 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Orlando: FL, USA, pp. 1-3, 2019.
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