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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.22 No.5
- 발행연도
- 2022.10
- 수록면
- 291 - 303 (13page)
- DOI
- 10.5573/JSTS.2022.22.5.291
이용수
초록· 키워드
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In the current work, lattice parameters, band structure, and optical characteristics of neat and doped ZnO are studied by utilizing ultrasoft pseudopotentials (USP) and generalized gradient approximation (GGA) with the support of Firstprinciples calculation (FPC) derived from density functional theory (DFT). The measurements had been performed in the supercell geometry that had been optimized. To discover the lattice parameters, electronic band structure, and optical characteristics of V-doped ZnO, the FPC based on DFT has been applied in CASTEP. The calculated lattice parameters are agree with observed experimental data. The volume of the doped system grows as the content of Vdoping in it increases. Pure and doped ZnO were investigated for band structure and energy bandgaps using the Monkhorst-Pack scheme’s k-point sampling techniques in the high symmetry direction of the Brillouin zone (G-A-H-K-G-M-L-H). In the presence of high V content, the bandgap energy decreases from 3.331 to 2.055 eV. From the band E-K diagram (V.B and C.B), PDOS and DOS diagrams insight into the electronic structure of the atom and the amount to which each energy band contributes to a specific atomic orbital were specified. The bandgaps were manipulated so that they narrowed, resulting in a redshift of the absorption spectrum in the IR region. The imaginary and real parts of the extinction coefficient, refractive index, and dielectric function have all increased at lower photon energies.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. THEORETICAL MODELS AND CALCULATION METHODS
Ⅲ. RESULTS AND DISCUSSION
Ⅳ. CONCLUSIONS
REFERENCES
참고문헌 (42)
참고문헌 신청
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Q. Hou, D. Xi, W. Li, X. Jia, and Z. Xu, “Firstprinciples research on the optical and electrical properties and mechanisms of In-doped ZnO”, Phys. B Condens. Matter, vol. 537, pp. 258-266, 2018, doi: 10.1016/j.physb.2018.02.026.
Z. Fan and J. G. Lu, “Zinc oxide nanostructures: Synthesis and properties”, J. Nanosci. Nanotechnol., vol. 5, no. 10, pp. 1561-1573, 2005, doi: 10.1166/jnn.2005.182.
D. M. Song, T. H. Wang, and J. C. Li, “First principles study of periodic size dependent bandgap variation of Cu doped ZnO single-wall nanotube”, J. Mol. Model., vol. 18, no. 12, pp. 5035-5040, 2012, doi: 10.1007/s00894-012-1510-4.
A. Janotti and C. G. Van De Walle, “Fundamentals of zinc oxide as a semiconductor,” Reports Prog. Phys., vol. 72, no. 12, 2009, doi: 10.1088/0034-4885/72/12/126501.
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