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논문 기본 정보

자료유형
학술저널
저자정보
Hana Sim (Gachon University) Jeongmin Lee (Gachon University) Seongjae Cho (Gachon University) Eou-Sik Cho (Gachon University) Sang Jik Kwon (Gachon University)
저널정보
대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.15 No.2
발행연도
2015.4
수록면
267 - 275 (9page)

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초록· 키워드

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In this paper, ZnO films were prepared by atomic layer deposition (ALD) and CdS films were deposited using chemical bath deposition (CBD) to form ZnO/CdS heterojunction. More accurate mapping of band arrangement of the ZnO/CdS heterojunction has been performed by analyzing its electrical and optical characteristics in depth by various methods including transmittance, x-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS). The optical bandgap energies (E<SUB>g</SUB>) of ZnO and CdS were 3.27 eV and 2.34 eV, respectively. UPS was capable of extracting the ionization potential energies (IPEs) of the materials, which turned out to be 8.69 eV and 7.30 eV, respectively. The electron affinity (EA) values of ZnO and CdS calculated from IPE and E<SUB>g</SUB> were 5.42 eV and 4.96 eV, respectively. Energy-band structures of the heterojunction could be accurately drawn from these parameters taking the conduction band offset (CBO) into account, which will substantially help acquisition of the full band structures of the thin films in the CIGS solar-cell device and contribute to the optimal device designs.

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Abstract
Ⅰ. INTRODUCTION
Ⅱ. THIN-FILM PROCESSING AND ANALYSIS TECHNIQUES
Ⅲ. RESULT AND DISCUSSION
Ⅳ. CONCLUSION
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