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논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2021.11
- 수록면
- 250 - 252 (3page)
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초록· 키워드
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In this paper, a large array resistive memristor device was manufactured by adjusting the crystal properties of the film by adjusting the growth conditions. It is composed of Au/amourphous/Au as a two-terminal resistive switching device with a Metal/Insulator/Metal (MIM) vertical structure. Changes in the state, thickness and crystal structure of the film were analyzed by adjusti ... 전체 초록 보기
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