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We fabricate semitransparent ultrathin (STUT) Cu(In,Ga)Se (CIGSe) thin film solar cell on indium-doped tin oxide (ITO) substrate by using single-stage co-evaporation process. The CIGSe absorption layer is deposited with a thickness of 300 nm, which is much thinner than the usual non-transparent thickness of 2 μm, to be applied to a transparent type. However, the reduced thickness of STUT CIGSe absorber layer leads to the reduction of electron and hole collection efficiency at the front and back side. Hence, it is necessary to improve the interface quality at the heterojunction. An engineered Zn-based buffer structure consisted of a few nanometer ZnS passivation and ZnMgO (ZMO) buffer layer is suggested and deposited on STUT CIGSe absorber using Atomic Layer Deposition (ALD). Compared with Chemical Bath Deposition (CBD) to deposit the widely used ... 전체 초록 보기
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ALD로 성장한 넓은 밴드갭의 Zn계열 버퍼층을 가진 반투광형 초박막 CIGSe 태양전지의 특성 향상
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