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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2021.9
- 수록면
- 96 - 105 (10page)
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초록· 키워드
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Even though above 22% efficiencies have been reported in Cd-free Cu(In,Ga)Se₂ (CIGS) solar cell with Zn-containing buffers, the efficiencies with Zn-containing buffers, in general, are well below 20%. One of the reasons is Zn diffusion from the Zn-containing buffer layer to CIGS film during buffer growth. To avoid the degradation, it is necessary to prevent the diffusion of Zn atoms from Zn-containing buffer to CIGS film. For the purpose, we characterized an In₂Se₃ film as a possible diffusion barrier layer because In₂Se₃ has no Zn component. It was found that an In₂Se₃ layer grown at 300°C was very effective in preventing Zn diffusion from a Zn-containing buffer. Also, the In₂Se₃ had a large potential barrier in the valence band at the In₂Se₃/CIGS interface. Therefore, In₂Se₃ passivation has the potential to achieve a super-high efficiency in CIGS solar cells that employ Cd-free ALD processed buffers containing Zn.
목차
ABSTRACT
1. Introduction
2. Experimental
3. Results and Discussion
4. Conclusions
References
참고문헌 (28)
참고문헌 신청
M. Nakamura / 2019 / Cd-Free Cu(In,Ga)(Se,S)2 thin-film solar cell with record efficiency of 23.35% / IEEE J. Photovoltaics 9:1863~1867
J. Chantana / 2020 / 22%-efficient Cd-free Cu(In,Ga)(S,Se)2solar cell by all-dry process using Zn0.8Mg0.2O and Zn0.9Mg0.1O:B as buffer and transparent conductive oxide layers / Progress in Photovoltaics: Research and Applications, Appl. 28:79~89
J. Chantana / 2020 / Transparent electrode and buffer layer combination for reducing carrier recombination and optical loss realizing over a 22%-efficient Cd-free alkalinetreated Cu(In,Ga)(S,Se)2 solar cell by the all-dry process / ACS Applied Materials and Interfaces 2:22298~22307
S. Sinha / 2020 / A review on atomic layer deposited buffer layers for Cu(In,Ga)Se2(CIGS) thin film solar cells: Past, present, and future / Solar Energy 290:515~537
W. Witte / 2013 / Impact of annealing on Cu(In,Ga)Se2 solar cells with Zn(O,S)/(Zn,Mg)O buffers / Thin Solid Films 535:180~183
J. Chantana / 2020 / 22%-efficient Cd-free Cu(In,Ga)(S,Se)2solar cell by all-dry process using Zn0.8Mg0.2O and Zn0.9Mg0.1O:B as buffer and transparent conductive oxide layers / Progress in Photovoltaics: Research and Applications, Appl. 28:79~89
J. Chantana / 2020 / Transparent electrode and buffer layer combination for reducing carrier recombination and optical loss realizing over a 22%-efficient Cd-free alkalinetreated Cu(In,Ga)(S,Se)2 solar cell by the all-dry process / ACS Applied Materials and Interfaces 2:22298~22307
S. Sinha / 2020 / A review on atomic layer deposited buffer layers for Cu(In,Ga)Se2(CIGS) thin film solar cells: Past, present, and future / Solar Energy 290:515~537
W. Witte / 2013 / Impact of annealing on Cu(In,Ga)Se2 solar cells with Zn(O,S)/(Zn,Mg)O buffers / Thin Solid Films 535:180~183
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