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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.21 No.6
- 발행연도
- 2021.12
- 수록면
- 398 - 405 (8page)
- DOI
- 10.5573/JSTS.2021.21.6.398
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초록· 키워드
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In this paper, we designed and analyzed the electrical performances of gallium-nitride (GaN)-based vertical trench metal-oxide-semiconductor field-effect-transistors (MOSFETs) using three-dimensional technical computer-aided design (3-D TCAD) simulation. The cylindrical device is generally considered as superior device than the polygonal devices because it has better gate controllability. In the case of GaN-based vertical devices, however, the cylindrical device performs inferiorly to the hexagonal device in terms of crystal directions for the GaN sidewall plane such as m-plane (1-100), a-plane (11-20), and c-plane (0001). The simulation results provide an understanding and design guidelines for which electrical properties of trench FETs are affected by cross-section shape.
목차
Abstract
I. INTRODUCTION
II. DEVICE STRUCTURE AND SIMULATION
III. RESULT AND DISCUSSION
IV. CONCLUSIONS
REFERENCES
참고문헌 (19)
참고문헌 신청
Jang, Won-Ho, et al. "P-GaN Gated AlGaN/GaN E-mode HFET Fabricated with Selective GaN Etching Process." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. pp. 485-490. Dec 2020
Ouduangvilai, Konepachith, et al. "Study of Gate Leakage Current on AlGaN/GaN MOSHEMTs with Atomic Layer Deposited Al2O3 Gate Oxide." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. pp. 540-550. Dec 2019
Choton, Jahid Chowdhury, et al. "Design and Characterization of 2DEG Structure of a Gallium Nitride HEMT." IEEE 2019 International Conference on Robotics, Electrical and Signal Processing Techniques (ICREST). pp. 486-489. Feb 2019.
Syaranamual, Govindo J., et al. "Role of twodimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation. " Microelectronics Reliability vol. 64 no. 21 pp. 589-593 Sep 2016
Kanechika, Masakazu, et al. "A vertical insulated gate AlGaN/GaN heterojunction field-effect transistor." Japanese Journal of Applied Physics Vol. 46 pp. L503-L505 May 2007
Ouduangvilai, Konepachith, et al. "Study of Gate Leakage Current on AlGaN/GaN MOSHEMTs with Atomic Layer Deposited Al2O3 Gate Oxide." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. pp. 540-550. Dec 2019
Choton, Jahid Chowdhury, et al. "Design and Characterization of 2DEG Structure of a Gallium Nitride HEMT." IEEE 2019 International Conference on Robotics, Electrical and Signal Processing Techniques (ICREST). pp. 486-489. Feb 2019.
Syaranamual, Govindo J., et al. "Role of twodimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation. " Microelectronics Reliability vol. 64 no. 21 pp. 589-593 Sep 2016
Kanechika, Masakazu, et al. "A vertical insulated gate AlGaN/GaN heterojunction field-effect transistor." Japanese Journal of Applied Physics Vol. 46 pp. L503-L505 May 2007
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