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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.21 No.6
- 발행연도
- 2021.12
- 수록면
- 390 - 397 (8page)
- DOI
- 10.5573/JSTS.2021.21.6.390
이용수
초록· 키워드
오류제보하기
In this study, a high-performance vertical gallium nitride (GaN) power transistor was designed by using two-dimensional technology computer-aided design simulator. In addition, the vertical GaN transistor is used to analyze the DC/DC boost converter. Systems requiring high voltages of 1000 V or more, such as electric vehicles, need wide devices to achieve a high breakdown voltage when using conventional power devices. However, vertical GaN transistors can be fabricated with a small device area and a high breakdown voltage. The proposed device has an off-current of 413 pA/㎠, an on-current of 22 kA/㎠, and a high breakdown voltage of 1693 V due to good gate controllability and the undoped-GaN layer. The designed device was used to construct a boost converter that doubled the input voltage and its characteristics were examined. The boost converter produced an output voltage of 1955 V and the voltage conversion efficiency was high at 97.75 %.
목차
Abstract
I. INTRODUCTION
II. DEVICE STRUCTURE AND SIMULATION STRATEGIES
III. RESULTS AND DISCUSSION
IV. CONCLUSIONS
REFERENCES
참고문헌 (24)
참고문헌 신청
Wang X, et al, “Nanoantibiotics”: a new paradigm for treating infectious diseases using nanomaterials in the antibiotics resistant era”, Journal of Controlled Release, Vol. 156, No. 2, pp. 128-145, Dec., 2011.
K. Hirama, et al, “RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on Diamond”, IEEE Electron Device Letters, Vol. 33, No. 4, pp. 513-515, Apr., 2012.
S. Garcia et al, “Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length”, Journal of Applied Physics, Vol. 114, No. 7, pp. 074503, Aug., 2013.
U. Singisetti et al, “Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510 mS/mm gm, and 0.66-Ω·mm Ron”, IEEE Electron Device Letters, Vol. 33, No. 1, pp. 26-28, Jan., 2012.
J-H. Lee et al, “Performance of Fully Recessed AlGaN/GaN MOSFET Prepared on GaN Buffer Layer Grown With AlSiC Precoverage on Silicon Substrate”, IEEE electron device letters, Vol. 34, No. 8, pp. 975-977, Aug., 2013.
K. Hirama, et al, “RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on Diamond”, IEEE Electron Device Letters, Vol. 33, No. 4, pp. 513-515, Apr., 2012.
S. Garcia et al, “Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length”, Journal of Applied Physics, Vol. 114, No. 7, pp. 074503, Aug., 2013.
U. Singisetti et al, “Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510 mS/mm gm, and 0.66-Ω·mm Ron”, IEEE Electron Device Letters, Vol. 33, No. 1, pp. 26-28, Jan., 2012.
J-H. Lee et al, “Performance of Fully Recessed AlGaN/GaN MOSFET Prepared on GaN Buffer Layer Grown With AlSiC Precoverage on Silicon Substrate”, IEEE electron device letters, Vol. 34, No. 8, pp. 975-977, Aug., 2013.
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