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The electron field emission (EFE) properties of vertically aligned arrays of silicon nanowires (SiNWs) grown from silicon substrate at different gold sputtering periods of 0 s, 8 s, 15 s and 25 s at a rate of 10 nm/min by electroless metal deposition process were investigated. It has been observed that the transformation of silicon tips from irregular to highly dense and uniform cylindrical morphological nanostructures with an increase in Au sputtering periods. A significant enhancement in EFE properties of as-prepared arrays of SiNWs with the increase in Au sputtering periods is observed. The threshold fields for attaining current density of 0.1 mA cm-2 were decreased gradually as 32.38 Vµm-1, 29.37 Vµm-1 and 23.19 Vµm-1 for the arrays of SiNWs synthesized from Si substrate by Au coating of 8 s, 15 s and 25 s respectively. Moreover, from Fowler–Nordheim plot, the turn-on field is observed to decrease from 16.56 V/µm for as-prepared to 8.77 V/µm for 25 s Au sputtered SiNW arrays. The effective work functions of the electron emitting array of SiNWs have been improved from 0.5 meV to 0.1 meV.
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