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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2018.1
- 수록면
- 652 - 656 (5page)
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The improved electrical properties of Cu-gate thin-fi lm transistors (TFTs) using an ink-synthesizing process were studied;this technology enables a low-cost and large area process for the display industry. We investigated the fi lm properties andthe eff ects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability ofthe devices were signifi cantly improved by applying a diff usion barrier at the interface between the Cu gate and the gateinsulator. By using a TaN diff usion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized,comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.
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참고문헌 (31)
참고문헌 신청
W.E. Howard / 1995 / Limitations and prospects of a-Si: H TFTs / J. Soc. Inf. Disp. 3:127~132
F. Chen / 1998 / Influence of line dimensions on the resistance of Cu interconnections / IEEE Electron Device Lett. 19:508~510
G.H. Kim / 2009 / Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors / Appl. Phys. Lett. 94:233501
K. Jinwoo / 2009 / All-solution-processed bottom-gate organic thin-film transistor with improved subthreshold behaviour using functionalized pentacene active layer / Phys. D Appl. Phys. 42:115107
S.J. Kim / 2011 / Low-temperature solution-processed $ZrO_2$ gate insulators for thin-film transistors using high-pressure annealing / Electrochem. Solid State Lett. 14:E35~E37
F. Chen / 1998 / Influence of line dimensions on the resistance of Cu interconnections / IEEE Electron Device Lett. 19:508~510
G.H. Kim / 2009 / Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors / Appl. Phys. Lett. 94:233501
K. Jinwoo / 2009 / All-solution-processed bottom-gate organic thin-film transistor with improved subthreshold behaviour using functionalized pentacene active layer / Phys. D Appl. Phys. 42:115107
S.J. Kim / 2011 / Low-temperature solution-processed
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