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논문 기본 정보

자료유형
학술저널
저자정보
전용문 (SK 하이닉스(주)) 송용원 (한국산업기술대학교) 홍경모 (SK 하이닉스(주))
저널정보
아태인문사회융합기술교류학회 아시아태평양융합연구교류논문지 아시아태평양융합연구교류논문지 제7권 제2호
발행연도
2021.1
수록면
87 - 98 (12page)

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In the era of the Fourth Industrial Revolution, semiconductors are among the main components in advanced technologies. It leads to the development of premium products with low power, high capacity, high performance, and high quality. Nevertheless, smartization and mobilization of IT devices require more advanced miniaturization characteristics among semiconductors, and operation testing ultra-high density wafers need to be study. The probe card, which is a key device for inspecting the operation of semiconductors and facilities that perform the final wafer testing of the fab (i.e., semiconductor fabrication), increases the total number of probes in order to cope with the micro process. The latter causes complex issues in the probe card inspection process. In this study, the set time and temperature change graph of the probe card during the Quality Control (QC) Story process, and the ratio of each item during the preheating process of the probe card were expressed in a Pareto-chart. The main improvement shown in the Pareto-chart was the application of 40 invention principles to define the Idea Final Results (IFR) using the TRIZ (Teoriya Resheniya Izobretatelskikh Zadatch) law of technological evolution and to study solutions that could minimize the effect of probe temperature on the probe card. Since the problem that occurs in the semiconductor probe card is complex, this study investigates the fusion method of QC Story and TRIZ, a famous problem solving method, to solve a real problem. The main result of this study is to improves the probe offset by achieving the probe temperature target (-10.0 °C) of the probe card. This enhances the probe card setup time by 27.43% and the standard deviation by 10.9 minutes, improving productivity and quality.

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