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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2020.1
- 수록면
- 540 - 547 (8page)
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Due to the sizably larger direct band gap of 2.26 eV of AlSb, the thermoelectric properties of intrinsic AlSb is considerablylow. Despite a promising Seebeck coefficient, the low electrical conductivity and high thermal conductivity has limited theimprovement of thermoelectric figure of merit. Replacing small amounts of Al by Mg can increase the number of holes inthe solid-state, effectively helping tune the carrier concentration. This work explores the effect of Mg doping in AlSb. Theincorporation of Mg at Al sites has increased the electrical conductivity without decreasing the Seebeck coefficient detrimentally. The thermoelectric figure of merit has shown improvement despite the large thermal conductivity observed. The work additionally explores the possibility of improving thermoelectric properties further by forming a composite with β-Zn4Sb3. The highest thermoelectric figure of merit was found to be 0.075 at 873 K, which is 6 times higher than that in intrinsic AlSb.
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