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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2019.1
- 수록면
- 396 - 401 (6page)
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초록· 키워드
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In this study, a gate dielectric suitable for application in field effect transistors (FETs) was synthesized. Gate dielectrics weredeposited using cyclohexane via plasma-enhanced chemical vapor deposition. These films were synthesized on silicon waferssubstrates with plasma powers adjusted from 10 to 60 W. Graphene was synthesized on a nickel substrate by a thermal chemicalvapor deposition process and coupled to the plasma-polymer via water transfer. Alpha step, Fourier-transform infraredspectroscopy, Raman spectroscopy, and atomic force microscopy findings in addition to water contact angle measurementswere analyzed to characterize the physical and chemical properties of the plasma-polymer thin film. Furthermore, a probestation was used to characterize the FET devices fabricated using such films.
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참고문헌 (17)
참고문헌 신청
Kim, B. J. / 2010 / High-performance fl exible graphene field effect transistors with ion gel gate dielectrics / Nano Lett 10:3464~3466
Lu, C. -C. / 2012 / High mobility fl exible graphene field-effect transistors with self-healing gate dielectrics / ACS Nano 6:4469~4474
Huang, C. K. / 2011 / Enhanced field emission from large scale uniform monolayer graphene supported by well-aligned ZnO nanowire arrays / Appl. Phys. Lett 98:173107
Wu, Z. S. / 2009 / Field emission of single-layer graphene films prepared by electrophoretic deposition / Adv. Mater 21:1756~1760
나영은 / 2017 / Approaches to Reduce the Contact Resistance by the Formation of Covalent Contacts in Graphene Thin Film Transistors / Applied Science and Convergence Technology 26(4):55~61
Lu, C. -C. / 2012 / High mobility fl exible graphene field-effect transistors with self-healing gate dielectrics / ACS Nano 6:4469~4474
Huang, C. K. / 2011 / Enhanced field emission from large scale uniform monolayer graphene supported by well-aligned ZnO nanowire arrays / Appl. Phys. Lett 98:173107
Wu, Z. S. / 2009 / Field emission of single-layer graphene films prepared by electrophoretic deposition / Adv. Mater 21:1756~1760
나영은 / 2017 / Approaches to Reduce the Contact Resistance by the Formation of Covalent Contacts in Graphene Thin Film Transistors / Applied Science and Convergence Technology 26(4):55~61
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