A High Performance Solar-Blind Detector Based on Mixed-Phase Zn0.45Mg0.55O Alloy Nanowires Network

Sai Ma; Shuanglong Feng; Shuai Kang; Feng Wang; Xie Fu; Wenqiang Lu

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자료유형: 학술저널

저자정보: Sai Ma (University of Chinese Academy of Sciences) Shuanglong Feng (Chongqing Institute of Green and Intelligent Technology) Shuai Kang (Chongqing Institute of Green and Intelligent Technology) Feng Wang (Changzhou Institute of Mechatronic Technology) Xie Fu (Chongqing Institute of Green and Intelligent Technology) Wenqiang Lu (University of Chinese Academy of Sciences)

저널정보: 대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.15 No.3

발행연도: 2019.1

수록면: 303 - 313 (11page)

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The mixed-phase Zn 0.45 Mg 0.55 O alloy nanowires network was fi rstly synthesized on SiO 2 /Si substrate by chemical vapordeposition method. The metal–semiconductor–metal structured Zn 0.45 Mg 0.55 O nanowires solar-blind photodetector with asharp absorption peak of wavelength 245 nm was fabricated, which exhibited an ultra-low dark current (0.2 nA), a high on–offratio (2.85 × 10 3 ), a large peak responsivity (0.48 A/W) at 6 V bias, and a high external quantum effi ciency (234.2%). Thisexcellent performance is comparable with other ZnMgO thin fi lm UV photodetectors. Moreover, the detection mechanism ofthis photodetector is explained by the modifi cations in energy band diagrams of diff erent nanojunctions among Zn 0.45 Mg 0.55 Onanowires and heterojunction interfaces between wurtzite and cubic structured ZnMgO in mixed-phase Zn 0.45 Mg 0.55 Onanowire. It is found that nanojunctions and heterojunction interfaces could be responsible for a low dark current and highresponsivity of this device based on mixed-phase Zn 0.45 Mg 0.55 O nanowire materials. This work reveals that the distinctiveadvantages of mixed-phase ZnMgO nanowires network for ultraviolet optoelectronic detection applications.

#Mixed-phase · Zn 0.45 Mg 0.55 O · Nanowires network · Solar-blind · UV photodetector

참고문헌 (37)

참고문헌 신청

Peng, L. / 2013 / Low-dimensional nanostructure ultraviolet photodetectors / Adv. Mater 25:37

Han, S. / 2010 / Mg0.58Zn0.42O thin films on MgO substrates with MgO buffer layer / ACS Appl. Mater. Inter 2:7

Li, L. / 2010 / Ultrahigh-performance solar-blind photodetectors based on individual single-crystalline In (2) Ge (2) O (7)nanobelts / Adv. Mater 22:45

Li, Y. / 2010 / Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection / Adv. Funct. Mater 20:22

Tsai, D. S. / 2013 / Solar-blind photodetectors for harsh electronics / Sci. Rep 3:2628

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