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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제22권 제2호
- 발행연도
- 2021.1
- 수록면
- 177 - 184 (8page)
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Enhancement in performance of Copper Zinc Tin Sulphide (Cu 2 ZnSnS 4 ) based thin film solar cell has been proposed using SCAPS-1D simulation program. The proposed cell structure Cu 2 ZnSnS 4 (CZTS) included CdS as buffer layer, CZTS as absorber layer, and n-doped ZnO as window layer. On these layers, the open circuit voltage (Voc), short circuit current density (Jsc), fi ll factor (FF), conversion effi ciency (η), and quantum effi ciency (QE) have been examined at the effect of temperature (280?400 K), thickness (500?4000 nm) series (1 Ω cm 2 ) and shunt (1000 Ω cm 2 ) resistances. The performance of proposed cell has been improved in terms of QE, Jsc, Voc, η, and QE with respect to the standard Mo/Cu 2 ZnSnS 4 /CdS/ZnO solar cell. However, by optimizing, we have successfully achieved the enhancement in efficiency of 19.64%, while Jsc, Voc, and FF are 24.22 mA cm ?2 , 0.9489 V, and 86.13% were observed, respectively.
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