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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2016.3
- 수록면
- 16 - 20 (5page)
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초록· 키워드
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Cu₂ZnSnS₄ (CZTS) thin films were fabricated by successive electrodeposition of layers of precursor elements followed by sulfurization of an electrodeposited Cu-Zn-Sn precursor. In order to improve quality of the CZTS films, we tried to optimize the deposition condition of absorber layers. In particular, I have conducted optimization experiments by changing the Cu-layer deposition time. The CZTS absorber layers were synthesized by different Cu-layer conditions ranging from 10 to 16 minutes. The sulfurization of Cu/Sn/Zn stacked metallic precursor thin films has been conducted in a graphite box using rapid thermal annealing (RTA). The structural, morphological, compositional, and optical properties of CZTS thin films were investigated using X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and X-ray Flourescenece Spectrometry (XRF). Especially, the CZTS TFSCs exhibits the best power conversion efficiency of 4.62% with V<SUB>oc</SUB> of 570 mV, <SUB>sc</SUB> of 18.15 mA/㎠ and FF of 45%. As the time of deposition of the Cu-layer to increasing, the properties were confirmed to be systematically changed. And we have been discussed in detail below.
목차
ABSTRACT
1. 서론
2. 실험방법
3. 실험 결과 및 고찰
4. 결론
References
참고문헌 (12)
참고문헌 신청
S.C. Riha, B.A. Parkinson, A.L. Prieto,“Solution-based synthesis and characterization of Cu2ZnSnS4 nanocrystals”, J. Am. Chem. Soc., Vol.131, pp.12054-12055, 2009.
T. Tanaka, D. Kawasaki, M. Nishio, Q. Guo, H. Ogawa, “Fabrication of Cu2ZnSnS4 thin films by co-evaporation”, Phys. Status Solidi, (c) 3, pp.2844-2847, 2006.
Jonathan J. Scragg a, Dominik M. Berg b, Phillip J. Dale b, “A 3.2% efficient Kesterite device from electrodeposited stacked elemental layers”, Elctroanlytical Chemistry, Vol.646, pp.52-59, 2010.
J. S. Seol, S. Y. Lee, J. C. Lee, H. D. Nam, K. H. Kim, “Electrical and optical properties of Cu2ZnSnS4 thin films prepared by rf magnetron sputtering process”, Sol. Energy Mater. Sol. Cells, Vol.75, no.1-2, pp.155-162, 2003.
L. Sun, J. He, H. Kong, F. Yue, P. Yang, J. H.Chu,“Structure, composition and optical properties of Cu2ZnSnS4 thin films deposited by Pulsed Laser Deposition method”, Sol. Energy Mater. Sol. Cells, Vol.95, no.10, pp.2907-2913, 2011.
T. Tanaka, D. Kawasaki, M. Nishio, Q. Guo, H. Ogawa, “Fabrication of Cu2ZnSnS4 thin films by co-evaporation”, Phys. Status Solidi, (c) 3, pp.2844-2847, 2006.
Jonathan J. Scragg a, Dominik M. Berg b, Phillip J. Dale b, “A 3.2% efficient Kesterite device from electrodeposited stacked elemental layers”, Elctroanlytical Chemistry, Vol.646, pp.52-59, 2010.
J. S. Seol, S. Y. Lee, J. C. Lee, H. D. Nam, K. H. Kim, “Electrical and optical properties of Cu2ZnSnS4 thin films prepared by rf magnetron sputtering process”, Sol. Energy Mater. Sol. Cells, Vol.75, no.1-2, pp.155-162, 2003.
L. Sun, J. He, H. Kong, F. Yue, P. Yang, J. H.Chu,“Structure, composition and optical properties of Cu2ZnSnS4 thin films deposited by Pulsed Laser Deposition method”, Sol. Energy Mater. Sol. Cells, Vol.95, no.10, pp.2907-2913, 2011.
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UCI(KEPA) : I410-ECN-0101-2016-563-002544599