지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2021.7
- 수록면
- 159 - 159 (1page)
이용수
초록· 키워드
오류제보하기
Atomically thin two-dimensional (2D) materials have emerged as promising candidates for flexible and transparent electronic applications [1, 2]. Here, we introduce non-volatile charge trapping memory devices, based on the 2D heterostructure field-effect transistor consisting of a few-layer MoS<sub>2</sub> channel and CrPS<SUB>4</SUB> charge-trapping gate stack. Clockwise hysteresis behaviors in transfer curves measured at room temperature show a strong dependence on the thickness of CrPS<SUB>4</SUB>, which are attributed to charge trapping at trap sites in the CrPS<SUB>4</SUB> layers. Ou ... 전체 초록 보기
목차
등록된 정보가 없습니다.
참고문헌 (0)
참고문헌 신청함께 읽어보면 좋을 논문
논문 유사도에 따라 DBpia 가 추천하는 논문입니다. 함께 보면 좋을 연관 논문을 확인해보세요!
-
Controllable Growth of Single Layer MoS2 and Resistance Switching Effect in Polymer/MoS2 Structure
Applied Science and Convergence Technology
2017 .09
-
Electron Tunneling Enhancement in MoS₂/Hexagonal Boron Nitride/Multilayer Graphene Heterostructures by Bubble Formation
Applied Science and Convergence Technology
2022 .09
-
Effect of low temperature microwave irradiation on tunnel layer of charge trap flash memory cell
한국진공학회 학술발표회초록집
2016 .02
-
Investigating InSnZnO as an Active Layer for Non-volatile Memory Devices and Increasing Memory Window by Utilizing Silicon-rich SiOx for Charge Storage Layer
한국진공학회 학술발표회초록집
2016 .02
-
Effect of grain size on the electrical characteristics of three-dimensional NAND flash memory devices
한국진공학회 학술발표회초록집
2020 .02
-
The effect of Li and Ag intercalation to MoS₂ for memory device
한국진공학회 학술발표회초록집
2019 .08
-
Charge trapping characteristics of the zinc oxide (ZnO) layer for metal-oxide semiconductor capacitor structure with room temperature
한국진공학회 학술발표회초록집
2016 .02
-
Rresistive switching memory has received wide attention as next-generation memory devices. However, accurate operation mechanisms have not yet been well established, limiting the applicabili
한국진공학회 학술발표회초록집
2017 .02
-
Fabrication of multi-bit floating gate memory based on two-dimensional materials
한국진공학회 학술발표회초록집
2021 .02
-
Memory Application of Spin-charge Conversion Effect with Graphene van der Waals Heterostructure using Tunable Ferroelectric Gating
한국자기학회 학술연구발표회 논문개요집
2022 .05
-
Photo-induced charge transfer in graphene/MoS₂ heterostructure
한국진공학회 학술발표회초록집
2016 .08
-
Resistive switching properties of HfxZr1-xO₂ thin films for flexible memory applications
한국진공학회 학술발표회초록집
2016 .08
-
Electrical characteristics and memory mechanisms of nonvolatile memory devices based on graphene oxide:mica nanocomposite sandwiched between two polymer(polyimide) buffer layers
한국진공학회 학술발표회초록집
2018 .02
-
Utilizing the effect of capacitive coupling, the memory window of flash memory increases as the back gate oxide thickness increases
한국진공학회 학술발표회초록집
2017 .08
-
Memory Characteristics of Capacitors with Poly-GaP Floating Gates
Applied Science and Convergence Technology
2020 .11
-
Nonvolatile charge trap memory device with In-Ga-Zn-O active channel layer using Microwave Irradiation
한국진공학회 학술발표회초록집
2015 .02
-
Reliable charge retention in nonvolatile memories with van der Waals heterostructures
한국진공학회 학술발표회초록집
2016 .02
-
Tunneling random access memory with Van der Waals heterostructures : a new memristive device
한국진공학회 학술발표회초록집
2016 .08
-
Non volatile memory device using mobile proton in gate insulator by hydrogen neutral beam treatment
한국진공학회 학술발표회초록집
2015 .08
-
Characteristics of an asymmetric double barrier device using charging effects for nonvolatile memory application
한국진공학회 학술발표회초록집
2017 .08
이 논문의 저자 정보
최근 본 자료
댓글(0)
0