Controllable Growth of Single Layer MoS₂ and Resistance Switching Effect in Polymer/MoS₂ Structure

Sung Jae Pa ,  k ,  Dongil Chu 외 1명

Applied Science and Convergence Technology

2017 .09

Resistive switching characteristics of Al₂O₃/ZnO thin films for flexible memory applications

Jun ZHU

한국진공학회 학술발표회초록집

2016 .08

TaO_x 와 TiO_x 를 이용한 RRAM 장치의 특성 비교

이가영 ,  정재훈 ,  전석엽 외 4명

새물리

2019 .10

Dopant concentration dependent resistive switching characteristics in silicon nitride-based memory devices

Sungjun KIM ,  Min-Hwi KIM ,  Tae-Hyeon KIM 외 5명

한국진공학회 학술발표회초록집

2016 .08

Effect of si bottom electrode on resistive switching characteristics for Si-compatible 3D vertical memory

Tae-Hyeon KIM ,  Sungjun KIM ,  Min-Hwi KIM 외 3명

한국진공학회 학술발표회초록집

2016 .08

Fabrication of resistive switching memory by using MoS₂ layers grown by chemical vapor deposition

Sung Jae Pa ,  k ,  Dong 외 2명

한국진공학회 학술발표회초록집

2016 .02

Charge Trapping Memory Device Based on MoS₂ FET with CrPS₄

Minjeong Shin ,  Mi Jung Lee ,  Chansoo Yoon 외 7명

한국자기학회 학술연구발표회 논문개요집

2021 .07

Forming free resistive switching behaviors in oxygenated amorphous carbon layer by ultra- thin atomic metal layer

Da Seul Hyeon ,  Gab ,  ial Jang 외 2명

한국진공학회 학술발표회초록집

2020 .08

Effects of double-SiO₂ thin-layers insertion on bipolar resistive switching characteristics for nonvolatile memory application

정균호 ,  김경민 ,  송승곤 외 1명

한국진공학회 학술발표회초록집

2017 .02

Characteristic analysis of single SiO_x layer ReRAM devices with thermal annealing and partial pressure

Taegeon Kim ,  Changhwan Shin

한국진공학회 학술발표회초록집

2020 .02

All ITO-based transparent crossbar array resistive memory devices

Min Ju YUN ,  Sungho KIM ,  Joobeom YUN 외 1명

한국진공학회 학술발표회초록집

2016 .08

Electrical characteristics and memory mechanisms of nonvolatile memory devices based on graphene oxide:mica nanocomposite sandwiched between two polymer(polyimide) buffer layers

김우겸 ,  김도형 ,  최명균 외 1명

한국진공학회 학술발표회초록집

2018 .02

Resistive switching properties of Hf_xZr_1-xO₂ thin films for flexible memory applications

Zhipeng WU ,  Jun ZHU ,  Xinpeng LIU

한국진공학회 학술발표회초록집

2016 .08

Enhanced Endurance Property in Perovskite Halide Resistive Switching Memory by 2D/3D Heterostructure

이상명 ,  김원빈 ,  이재명 외 3명

한국진공학회 학술발표회초록집

2020 .02

Resistive Switching Effects of Zinc Silicate Thin Films grown by RF-magnetron co-sputtering method for Nonvolatile Memory Applications

Minho Im ,  Jisoo Kim ,  Junghyun Sok 외 2명

한국진공학회 학술발표회초록집

2019 .08

A non-destructive study of the conducting filaments in resistive switching metal-oxides using superconducting proximity effect

Yongcheol Jo ,  Yongmin Kim ,  Jongmin Kim 외 10명

한국진공학회 학술발표회초록집

2017 .02

Impact of impurities and annealing conditions on the characteristics of Si/HfO₂:Al/TiN ReRAM devices

Jongseok Woo ,  Changhwan Shin

한국진공학회 학술발표회초록집

2020 .02

Enhancement Endurance Resistive Switching Memory by Using Hybrid Organometal Halide Perovskite and RbPbI3 Mixture Active Layer

Sang Myeong Lee ,  OH YEONG GONG ,  SHI WANG CHEN 외 3명

한국진공학회 학술발표회초록집

2019 .08

Resistive Switching in Silver Iodide with Multi-Layer Graphene Electrodes

Beomkyu Shin ,  Yeonwoo Choi ,  Jong Yun Kim 외 2명

Applied Science and Convergence Technology

2024 .07

Investigating InSnZnO as an Active Layer for Non-volatile Memory Devices and Increasing Memory Window by Utilizing Silicon-rich SiOx for Charge Storage Layer

Heejun Pa ,  k ,  Cam Phu Thi Nguyen 외 4명

한국진공학회 학술발표회초록집

2016 .02