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논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2021.7
- 수록면
- 63 - 63 (1page)
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Magnetic random access memory (MRAM) is a non-volatile memory that maintains information even when the power is turned off, making it one of the superior candidates for the next generation memory devices. Recently, MRAM using spin-transfer torque (STT) as a writing mechanism has been commercialized. However, conventional STT mechanism has large operation energy and slow switching time. To solve the problem, spin-orbit torque (SOT), a newly coined writing mechanism, has been proposed as a solution [1]. The spin current generated by the spin Hall effect (SHE) and Rashba-Edelstein effect transfers the angular momentum to the magnetization and triggers the torque. Compared to the conventional STT, SOT provides rapid magnetization switching and enables low-energy operation. To develop MRAM device incorporating SOT, it is essential to investigate materials or their combinations with large SOT efficiency. A representative material of a large SOT efficiency is a β-W with an efficiency of 0.33 [2]. According to the recent theoretical calculation, an enhancement of the SOT efficiency can be achieved by using β-W and Ta alloys due to a modification of the energy band during the formation of the alloy [3]. To clarify the above-mentioned theoretically calculated result, we experimentally me ... 전체 초록 보기
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