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자료유형
학술대회자료
저자정보
Do, K. W. (School of Electrical Engineering and Computer Science, Kyungpook National University) Yang, C. M. (School of Electrical Engineering and Computer Science, Kyungpook National University) Kang, I. S. (School of Electrical Engineering and Computer Science, Kyungpook National University) Kim, K. M. (School of Electrical Engineering and Computer Science, Kyungpook National University) Back, K. H. (School of Electrical Engineering and Computer Science, Kyungpook National University) Cho, H. I. (School of Electrical Engineering and Computer Science, Kyungpook National University) Lee, H. B. (School of Electrical Engineering and Computer Science, Kyungpook National University) Kong, S. H. (School of Electrical Engineering and Computer Science, Kyungpook National University) Hahm, S. H. (School of Electrical Engineering and Computer Science, Kyungpook National University) Kwon, D. H. (School of Electronic Information & Communication Eng., Kyungil University) Lee, J. H. (School of Electrical Engineering and Computer Science, Kyungpook National University) Lee, J. H. (School of Electrical Engineering and Computer Science,)
저널정보
한국반도체디스플레이기술학회 한국반도체및디스플레이장비학회 학술대회 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
발행연도
2005.1
수록면
193 - 196 (4page)

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Low resistance Ni thin films for using NiSi formation and metallization by atomic layer deposition (ALD) method have been studied. ALD temperature window is formed between $200^{\circ}C\;and\;250^{\circ}C$ with deposition rate of $1.25{\AA}$/cycle. The minimum resistance of deposited Ni films shows $4.333\;{\Omega}/\square$ on the $SiO_2/Si$ substrate by $H_2$ direct purging process. The reason of showing the low resistance is believed to be due to format ion of the $Ni_3C$ phase by residual carbon in Bis-Ni The deposited film exhibits excellent step coverage in the trench having 1(100 nm) : 16 (1.6 um) aspect ratio.

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