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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.20 No.4
- 발행연도
- 2020.8
- 수록면
- 366 - 371 (6page)
- DOI
- 10.5573/JSTS.2020.20.4.366
이용수
초록· 키워드
오류제보하기
In this study, a 1550-nm Ge-on-Si photodetector coupled with a Si waveguide on siliconon-insulator (SOI) platform has been fabricated and characterized with a particular emphasis on the backend-of-the-line (BEOL) process. A comparison study of the effects of different metallization schemes on the responsivity has been conducted. Compared to the photodetector with a bulk metal contact, those with single-layered and double-layered contact-hole arrays demonstrated improvements in the optical responsivity at an operating voltage of 1 V. Especially, double-layer scheme showed prominent increase in photon-induced current without significant increase in dark current.
목차
Abstract
I. INTRODUCTION
II. PROCESS INTEGRATION
III. MEASUREMENT RESULTS AND DISCUSSION
IV. CONCLUSION
REFERENCES
참고문헌 (16)
참고문헌 신청
J. Michel, J. Liu, and L. C. Kimerling, “High- Performance Ge-on-Si Photodetectors,” Nat. Photonics, vol. 4, pp. 527-534, Jul. 2010.
T.-Y. Liow, K.-W. Ang, Q. Fang, J.-F. Song, Y.-Z. Xiong, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Silicon Modulators and Germanium Photodetectors on SOI: Monolithic Integration, Compatibility, and Performance Optimization,” IEEE. J. Sel. Top. Quantum Electron., vol. 16, no. 1, pp. 307-315, Jan./Feb. 2010.
S. Cho, H. Kim, M.-C. Sun, B.-G. Park, and J. S. Harris, Jr., “Process Considerations for 80-GHz High-Performance p-i-n Silicon Photodetector for Optical Interconnect,” J. Semicond. Technol. Sci., vol. 12, no. 3, pp. 370-376, Sep. 2012.
W.-H. Jang, H.-S. Kim, M.-J. Kang, C.-H. Cho, and H.-Y. Cha, “Recessed AlGaN/GaN UV Phototransistor,” J. Semicond. Technol. Sci., vol. 19, no. 2, pp. 184-189, Apr. 2019.
L. Liao, “Intel Silicon Photonics: From Research to Product,” Proc. IEEE Components, Packaging and Manufacturing Technologuy Chapter, Santa Clara Valley, Mar. 2017.
T.-Y. Liow, K.-W. Ang, Q. Fang, J.-F. Song, Y.-Z. Xiong, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Silicon Modulators and Germanium Photodetectors on SOI: Monolithic Integration, Compatibility, and Performance Optimization,” IEEE. J. Sel. Top. Quantum Electron., vol. 16, no. 1, pp. 307-315, Jan./Feb. 2010.
S. Cho, H. Kim, M.-C. Sun, B.-G. Park, and J. S. Harris, Jr., “Process Considerations for 80-GHz High-Performance p-i-n Silicon Photodetector for Optical Interconnect,” J. Semicond. Technol. Sci., vol. 12, no. 3, pp. 370-376, Sep. 2012.
W.-H. Jang, H.-S. Kim, M.-J. Kang, C.-H. Cho, and H.-Y. Cha, “Recessed AlGaN/GaN UV Phototransistor,” J. Semicond. Technol. Sci., vol. 19, no. 2, pp. 184-189, Apr. 2019.
L. Liao, “Intel Silicon Photonics: From Research to Product,” Proc. IEEE Components, Packaging and Manufacturing Technologuy Chapter, Santa Clara Valley, Mar. 2017.
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