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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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Tantalum nitride (TaNx) thin films were grown utilizing an inductively coupled plasma (ICP) assisted direct current (DC) sputtering, and 20–100% improved microhardness values were obtained. The detailed microstructural changes of the TaNx films were characterized utilizing transmission electron microscopy (TEM), as a function of nitrogen gas fraction and ICP power. As nitrogen gas fraction increases from 0.05 to 0.15, the TaNx phase evolves from body�centered-cubic (b.c.c.) TaN0.1, to face-centered-cubic (f.c.c.) δ-TaN, to hexagonal-close-packing (h.c.p.) ε-TaN phase. By increasing ICP power from 100 W to 400 W, the f.c.c. δ- TaN phase becomes the main phase in all nitrogen fractions investigated. The higher ICP power enhances the mobility of Ta and N ions, which stabilizes the δ-TaN phase like a high-temperature regime and removes the micro-voids between the columnar grains in the TaNx film. The dense δ-TaN structure with reduced columnar grains and micro-voids increases the strength of the TaNx film.
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참고문헌 (29)
참고문헌 신청
K. Baba / 1996 / Synthesis and properties of tantalum nitride films formed by ion beam assisted deposition / Surf. Coat. Technol 84:429
S. I. Baik / 2016 / Atomicscale structural and chemical study of columnar and multilayer re-Ni electrodeposited thermal barrier coating / Adv. Eng. Mater 18(7):1133~1144
S. I. Baik / 2008 / Characterization of TaN thin films synthesized by ICP assisted sputtering / Microsc. Microanal 14:330~331
S. L. Cho / 1999 / Diffusion barrier properties of Metallorganic chemical vapor deposited tantalum nitride films against cumetallization / J. Electrochem. Soc 146:3724
K. J. Choi / 2004 / Characteristics of Pt and TaN metal gate electrode for high-k hafnium oxide gate dielectrics / Electrochem. Solid-State Lett 7:G47
S. I. Baik / 2016 / Atomicscale structural and chemical study of columnar and multilayer re-Ni electrodeposited thermal barrier coating / Adv. Eng. Mater 18(7):1133~1144
S. I. Baik / 2008 / Characterization of TaN thin films synthesized by ICP assisted sputtering / Microsc. Microanal 14:330~331
S. L. Cho / 1999 / Diffusion barrier properties of Metallorganic chemical vapor deposited tantalum nitride films against cumetallization / J. Electrochem. Soc 146:3724
K. J. Choi / 2004 / Characteristics of Pt and TaN metal gate electrode for high-k hafnium oxide gate dielectrics / Electrochem. Solid-State Lett 7:G47
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