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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Journal of Korean Vacuum Society Vol.12 No.S1
- 발행연도
- 2003.10
- 수록면
- 1 - 6 (6page)
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초록· 키워드
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SiC-C films were deposited with r. f. magnetron sputtering on substrates followed by argon ion bombardment. These films were then permeated by hydrogen gas under the pressure of 3.23×10^7 ㎩ for 3 hours at temperature of 500K or bombarded with hydrogen ion beam at 5 keV and a dose of 1×10^(18) ions/㎠. SIMS, AES and XPS were used to analyze hydrogen related species, chemical bonding states of C, Si as well as contamination oxygen due to hydrogen participation in the SiC-C films in order to study the different behaviors of hydrogen in carbon-carbide films due to different hydrogen introduction. Related mechanism about the effects of hydrogen on the element of the SiC-C films was discussed in this paper.
목차
Abstract
1. Introduction
2. Experimental details
3. Results and discussion
4. Conclusions
Acknowledgements
References
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UCI(KEPA) : I410-ECN-0101-2019-420-001268272