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학술저널
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한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제16권 제1호
발행연도
2015.1
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10 - 15 (6page)

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A thin-film transmission line (TFTL) employing a microstrip line/coplanar waveguide (ML/CPW) was fabricated ona silicon substrate for application to a miniaturized on-chip RF component, and the RF characteristics of the devicewith the proposed structure were investigated. The TFTL employing a ML/CPW composite structure exhibited ashorter wavelength than that of a conventional coplanar waveguide and that of a thin-film microstrip line. Whenthe TFTL with the proposed structure was fabricated to have a length of λ/8, it showed a loss of less than 1.12 dBat up to 30 GHz. The improvement in the periodic capacitance of the TFTL caused for the propagation constant,β, and the effective permittivity, εeff, to have values higher than those of a device with only a conventional coplanarwaveguide and a thin film microstrip line. The TFTL with the proposed structure showed a β of 0.53~2.96 rad/mm andan εeff of 22.3~25.3 when operating from 5 to 30 GHz. A highly miniaturized impedance transformer was fabricatedon a silicon substrate using the proposed TFTL for application to a low-impedance transformation for broadband. The size of the impedance transformer was 0.01 mm2, which is only 1.04% of the size of a transformer fabricatedusing a conventional coplanar waveguide on a silicon substrate. The impedance transformer showed excellent RFperformance for broadband.

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