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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2008.1
- 수록면
- 208 - 212 (5page)
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This paper reports physical properties of in situ boron doped silicon films made from boron source gas and silane (SiH₄) gas in a conventional low-pressure chemical vapor deposition vertical furnace. If the p-type polysilicon is formed by boron implantation into undoped polysilicon, the plasma nitridation (PN) process is added on the oxide in order to suppress boron penetration that can be caused during the thermal treatments used in fabrication. In-situ boron doped polysilicon deposition can complete p-type polysilicon film with only one deposition process and need not the PN process, because there is not interdiffusion of dopant at the intermediate temperatures of the subsequent steps. Since in-situ boron doped polysilicon films have higher work function than that of n-type polysilicon and they are compatible with the underlying oxide, they may be promising materials for improving memory cell characteristics if we make its profit of these physical properties.
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참고문헌 (9)
참고문헌 신청
B. Caussat / 2004 / Influence of dopant concentration and type of substrate on the local organization of low-pressure chemical vapour deposition in situ boron doped silicon f
C.M. Maritan / 1989 / Poly silicon emitter p-n-p transistors / IEEE Trans. on Electron Devices 36 (6)
C.Y. Lin / 1995 / Suppression of boron penetration in BF2- implanted p-type gate MOSFET by trapping of fluorine in amorphous gate / IEEE Trans. Electron Devices 42 (8) : 1503
J.R. Pfiester / 1990 / The effects of boron penetration on p+ polysilicon gates PMOS devices / IEEE Trans. Electron Devices 37 : 1842 ~
J.Y.C. Sun / 1989 / Study of boron penetration through thin oxide with p+-polysilicon gate / Symp on VLSI Technol Tech Dig : 17 ~
C.M. Maritan / 1989 / Poly silicon emitter p-n-p transistors / IEEE Trans. on Electron Devices 36 (6)
C.Y. Lin / 1995 / Suppression of boron penetration in BF2- implanted p-type gate MOSFET by trapping of fluorine in amorphous gate / IEEE Trans. Electron Devices 42 (8) : 1503
J.R. Pfiester / 1990 / The effects of boron penetration on p+ polysilicon gates PMOS devices / IEEE Trans. Electron Devices 37 : 1842 ~
J.Y.C. Sun / 1989 / Study of boron penetration through thin oxide with p+-polysilicon gate / Symp on VLSI Technol Tech Dig : 17 ~
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