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This paper presents an extension of the dynamic range in a complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) using a stacked photodiode and feedback structure. The proposed APS is composed of two additional MOSFETs and stacked P+/N-well/P-sub photodiodes as compared with a conventional APS. Using the proposed technique, the sensor can improve the spectral response and dynamic range. The spectral response is improved using an additional stacked P+/N-well photodiode, and the dynamic range is increased using the feedback structure. Although the size of the pixel is slightly larger than that of a conventional three-transistor APS, control of the dynamic range is much easier than that of the conventional methods using the feedback structure. The simulation and measurement results for the proposed APS demonstrate a wide dynamic range feature. The maximum dynamic range of the proposed sensor is greater than 103 dB. The designed circuit is fabricated by the 0.35- m 2-poly 4-metal standard CMOS process, and its characteristics are evaluated.
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참고문헌 (18)
참고문헌 신청
Ayand S.U / 2013 / Boosted CMOS APS pixel readout for ultra low-voltage and low-power operation / IEEE Trans. Circuits Syst. II-Express Briefs 60 (6) : 341 ~ 345
Bandoh Y / 2010 / Recent advances in high dynamic range imaging technology / International Conference on Image Processing (ICIP) : 3125 ~ 3128
D. W. Park / 2007 / A wide dynamic-range CMOS image sensor using self-reset technique / IEEE Electron Device Lett 28 (10) : 890 ~ 892
J. B. Chun / 2009 / Dynamicrange widening in a CMOS image sensor through exposure control over a dual-photodiode Pixel / IEEE Tran. Electron Devices 56 (12) : 3000 ~ 3008
J. H. Park / 2005 / A 142 dB dynamic range CMOS image sensor with multiple exposure time signals / Asian Solid-State Circuits Conference : 85 ~ 88
Bandoh Y / 2010 / Recent advances in high dynamic range imaging technology / International Conference on Image Processing (ICIP) : 3125 ~ 3128
D. W. Park / 2007 / A wide dynamic-range CMOS image sensor using self-reset technique / IEEE Electron Device Lett 28 (10) : 890 ~ 892
J. B. Chun / 2009 / Dynamicrange widening in a CMOS image sensor through exposure control over a dual-photodiode Pixel / IEEE Tran. Electron Devices 56 (12) : 3000 ~ 3008
J. H. Park / 2005 / A 142 dB dynamic range CMOS image sensor with multiple exposure time signals / Asian Solid-State Circuits Conference : 85 ~ 88
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