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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.17 No.2
- 발행연도
- 2017.4
- 수록면
- 199 - 203 (5page)
이용수
초록· 키워드
오류제보하기
Mutually-actuated-nano-electromechanical (MA-NEM) memory switches are proposed for scalability improvement. While conventional NEM memory switches have fixed electrode lines, the proposed MA-NEM memory switches have mutually-actuated cantilever-like electrode lines. Thus, MANEM memory switches show smaller deformations of beams in switching. This unique feature of MA-NEM memory switches allows aggressive reduction of the beam length while maintaining nonvolatile property. Also, the scalability of MA-NEM memory switches is confirmed by using finite-element (FE) simulations. MA-NEM memory switches can be promising solutions for reconfigurable logic (RL) circuits.
목차
Abstract
I. INTRODUCTION
II. PULL-IN MECHANISM
III. OPERATION ANALYSIS
IV. LENGTH SCALABILITY
V. CONCLUSIONS
ACKNOWLEDGMENTS
REFERENCES
참고문헌 (18)
참고문헌 신청
C. Dong, C. Chen, S. Mitra and D. Chen, “Architecture and performance evaluation of 3D CMOS-NEM FPGA,” SLIP’11 Proceedings of the System Level Interconnect Prediction Workshop, pp.2?9, NJ, USA, Jun. 2011
H. Scott, “The roles of FPGAs in reprogrammable systems.” Proceedings of the IEEE, vol.86, no.4, pp. 615?638, Apr. 1998.
D. E. Van den Bout, J. N. Morris, D. Thomae, S. Labrozzi, S. Wingo and P. Hallman, “Anyboard : An FPGA-based, reconfigurable system,” IEEE Design & Test, pp.21?30, CA, USA, July. 1992.
S. Chong, B. Lee, J Provine, “Integration of nanoelectromechanical (NEM) relays with silicon CMOS with functional CMOS-NEM circuit.” Proceedings of the System Level Interconnect Prediction Workshop. IEEE Press, pp.30.5.1? 30.5.4 Washington DC, USA, Dec. 2011
S. Sun and P. G. Y. Tsui, “Limitation of CMOS supply-voltage scaling by MOSFET thresholdvoltage variation.” IEEE Journal of Solid-State Circuits, vol.30, no.8, pp. 947?949, Aug. 2002.
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UCI(KEPA) : I410-ECN-0101-2018-020-000839702