지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.15 No.2
- 발행연도
- 2015.4
- 수록면
- 301 - 306 (6page)
이용수
초록· 키워드
오류제보하기
An ultra-compact and wideband low noise amplifier (LNA) in a quad flat non-leaded (QFN) package is presented. The LNA monolithic microwave integrated circuit (MMIC) is implemented in a 0.25 μm GaN IC technology on a Silicon Carbide (SiC) substrate provided by Triquint. A source degeneration inductor and a gate inductor are used to obtain the noise and input matching simultaneously. The resistive feedback and inductor peaking techniques are employed to achieve a wideband characteristic. The LNA chip is mounted in the 3×3-mm<SUP>2</SUP> QFN package and measured. The supply voltages for the first and second stages are 14 V and 7 V, respectively, and the total current is 70 mA. The highest gain is 13.5 dB around the mid-band, and -3 dB frequencies are observed at 0.7 and 12 GHz. Input and output return losses (S11 and S22) of less than -10 dB measure from 1 to 12 GHz; there is an absolute bandwidth of 11 GHz and a fractional bandwidth of 169%. Across the bandwidth, the noise figures (NFs) are between 3 and 5 dB, while the output-referred third-order intercept points (OIP3s) are between 26 and 28 dBm. The overall chip size with all bonding pads is 1.1×0.9 mm<SUP>2</SUP>. To the best of our knowledge, this LNA shows the best figure-of-merit (FoM) compared with other published GaN LNAs with the same gate length.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. CIRCUIT ANALYSIS AND DESIGN
Ⅲ. IMPLEMENTATION AND MEASUREMENTS
Ⅳ. CONCLUSIONS
REFERENCES
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UCI(KEPA) : I410-ECN-0101-2016-569-001461895