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논문 기본 정보

자료유형
학술저널
저자정보
Ki Jin Han (Ulsan National Institute of Science and Technology (UNIST)) Younghyun Lim (Ulsan National Institute of Science and Technology (UNIST)) Youngmin Kim (Ulsan National Institute of Science and Technology (UNIST))
저널정보
대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.14 No.5
발행연도
2014.10
수록면
649 - 657 (9page)

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초록· 키워드

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In this study, the effects of the frequencydependent characteristics of through-silicon vias (TSVs) on the performance of 3D ICs are examined by evaluating a typical interconnection structure, which is composed of 32-nm CMOS inverter drivers and receivers connected through TSVs. The frequency-domain model of TSVs is extracted in S-parameter from a 3D electromagnetic (EM) method, where the dimensional variation effect of TSVs can be accurately considered for a comprehensive parameter sweep simulation. A parametric analysis shows that the propagation delay increases with the diameter and height of the TSVs but decreases with the pitch and liner thickness. We also investigate the crosstalk effect between TSVs by testing different signaling conditions. From the simulations, the worst signal integrity is observed when the signal experiences a simultaneously coupled transition in the opposite direction from the aggressor lines. Simulation results for nine-TSV bundles having regular and staggered patterns reveal that the proposed method can characterize TSV-based 3D interconnections of any dimensions and patterns.

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Abstract
I. INTRODUCTION
II. EM MODELING AND S-PARAMETER EXTRACTION
III. SIMULATION RESULTS
IV. CONCLUSION
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UCI(KEPA) : I410-ECN-0101-2015-560-002808388