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논문 기본 정보

자료유형
학술저널
저자정보
Jun-Sang Park (Sogang University) Tai-Ji An (Sogang University) Suk-Hee Cho (Sogang University) Yong-Min Kim (Sogang University) Gil-Cho Ahn (Sogang University) Ji-Hyun Roh (Samsung Thales Co.) Mun-Kyo Lee (Samsung Thales Co.) Sun-Phil Nah (Agency for Defense Development) Seung-Hoon Lee (Sogang University)
저널정보
대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.14 No.2
발행연도
2014.4
수록면
189 - 197 (9page)

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초록· 키워드

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This work proposes a 12b 100 MS/s 0.11 μm CMOS three-step hybrid pipeline ADC for highspeed communication and mobile display systems requiring high resolution, low power, and small size. The first stage based on time-interleaved dualchannel SAR ADCs properly handles the Nyquist-rate input without a dedicated SHA. An input sampling clock for each SAR ADC is synchronized to a reference clock to minimize a sampling-time mismatch between the channels. Only one residue amplifier is employed and shared in the proposed ADC for the first-stage SAR ADCs as well as the MDAC of back-end pipeline stages. The shared amplifier, in particular, reduces performance degradation caused by offset and gain mismatches between two channels of the SAR ADCs. Two separate reference voltages relieve a reference disturbance due to the different operating frequencies of the front-end SAR ADCs and the back-end pipeline stages. The prototype ADC in a 0.11 μm CMOS shows the measured DNL and INL within 0.38 LSB and 1.21 LSB, respectively. The ADC occupies an active die area of 1.34 mm² and consumes 25.3 mW with a maximum SNDR and SFDR of 60.2 dB and 69.5 dB, respectively, at 1.1 V and 100 MS/s.

목차

Abstract
I. INTRODUCTION
II. ARCHITECTURE
III. CIRCUIT DESCRIPTION
IV. MEASUREMENT RESULTS
V. CONCLUSIONS
REFERENCES

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UCI(KEPA) : I410-ECN-0101-2015-560-001440739