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논문 기본 정보

자료유형
학술저널
저자정보
Jongmin Geum (Korea University) Eun Sik Jung (Maple Semiconductor Co.) Yong Tae Kim (Korea Institute of Science and Technology) Ey Goo Kang (Far East University) Man Young Sung (Korea University)
저널정보
대한전기학회 Journal of Electrical Engineering & Technology Journal of Electrical Engineering & Technology Vol.9 No.3
발행연도
2014.5
수록면
843 - 847 (5page)

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초록· 키워드

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In Super Junction (SJ) MOSFETs, charge balance is the most important issue of the SJ fabrication process. In order to achieve the best electrical characteristics, such as breakdown voltage and on-resistance, the N-type and P-type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, which is known as the charge balance condition. In conventional charge balance analysis, based on multi-epi process SJ MOSFETs, analytical model has only N, P pillar width and doping concentration parameter. But applying a conventional charge balance principle to trench filling process, easier than Multi-epi process, is impossible due to the missing of the trench angle parameter. To achieve much more superior characteristics of on-resistance in trench filling SJ MOFET, the appropriate trench angle is necessary. So in this paper, modulated charge balance analysis is proposed, in which a trench angle parameter is added. The proposed method is validated using the TCAD simulation tool.

목차

Abstract
1. Introduction
2. Electrical Characteristics of Super Junction MOSFET
3. Charge Balance Parameter Modulation in Trench Filling Super Junction MOSFET
4. Conclusion
References

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UCI(KEPA) : I410-ECN-0101-2015-500-001462553