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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전기학회 Journal of Electrical Engineering & Technology Journal of Electrical Engineering & Technology Vol.9 No.3
- 발행연도
- 2014.5
- 수록면
- 843 - 847 (5page)
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초록· 키워드
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In Super Junction (SJ) MOSFETs, charge balance is the most important issue of the SJ fabrication process. In order to achieve the best electrical characteristics, such as breakdown voltage and on-resistance, the N-type and P-type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, which is known as the charge balance condition. In conventional charge balance analysis, based on multi-epi process SJ MOSFETs, analytical model has only N, P pillar width and doping concentration parameter. But applying a conventional charge balance principle to trench filling process, easier than Multi-epi process, is impossible due to the missing of the trench angle parameter. To achieve much more superior characteristics of on-resistance in trench filling SJ MOFET, the appropriate trench angle is necessary. So in this paper, modulated charge balance analysis is proposed, in which a trench angle parameter is added. The proposed method is validated using the TCAD simulation tool.
목차
Abstract
1. Introduction
2. Electrical Characteristics of Super Junction MOSFET
3. Charge Balance Parameter Modulation in Trench Filling Super Junction MOSFET
4. Conclusion
References
참고문헌 (9)
참고문헌 신청
1. [학술지(정기간행물)] - 이현웅 / 2012 / Protection Circuit Module에 최적화된 60 V급 TDMOSFET 최적화 설계에 관한 연구 / 전기전자재료학회논문지 25 (5) : 340 ~ 344
2. [학술지(정기간행물)] - S. S. Kyoung / / A Novel Trench IGBT with a Deep P+ Layer beneath the Trench Emitter / IEEE Electron Device 30 (1) : 82 ~ 84
3. [학술지(정기간행물)] - J. S. Lee / 2007 / Improvement of electrical characteristics of vertical NPT trench gate IGBT using trench emitter electrode / J. KIEEME 2 (5) : 403 ~
4. [학술지(정기간행물)] - J. S. Lee / 2008 / Shielding region effects on a trench gate IGBT / Microelectron. J 39 (1) : 57 ~ 62
5. [학술대회논문] - Fujihira, T. / 1998 / Simulated superior performances of semiconductor superjunction devices / Proc. of the ISPSD’98 : 423 ~ 426
2. [학술지(정기간행물)] - S. S. Kyoung / / A Novel Trench IGBT with a Deep P+ Layer beneath the Trench Emitter / IEEE Electron Device 30 (1) : 82 ~ 84
3. [학술지(정기간행물)] - J. S. Lee / 2007 / Improvement of electrical characteristics of vertical NPT trench gate IGBT using trench emitter electrode / J. KIEEME 2 (5) : 403 ~
4. [학술지(정기간행물)] - J. S. Lee / 2008 / Shielding region effects on a trench gate IGBT / Microelectron. J 39 (1) : 57 ~ 62
5. [학술대회논문] - Fujihira, T. / 1998 / Simulated superior performances of semiconductor superjunction devices / Proc. of the ISPSD’98 : 423 ~ 426
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