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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
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- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.14 No.1
- 발행연도
- 2014.2
- 수록면
- 96 - 99 (4page)
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초록· 키워드
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In high-κ/metal-gate (HK/MG) metaloxide-semiconductor field-effect transistors (MOSFETs) at 45-nm and below, the metal-gate material consists of a number of grains with different grain orientations. Thus, Monte Carlo (MC) simulation of the threshold voltage (VTH) variation caused by the workfunction variation (WFV) using a limited number of samples (i.e., approximately a few hundreds of samples) would be misleading. It is ideal to run the MC simulation using a statistically significant number of samples (> ~ 106); however, it is expensive in terms of the computing requirement for reasonably estimating the WFV-induced VTH variation in the HK/MG MOSFETs. In this work, a simple matrix model is suggested to implement a computing-inexpensive approach to estimate the WFV-induced VTH variation. The suggested model has been verified by experimental data, and the amount of WFV-induced VTH variation, as well as the VTH lowering is revealed.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. MODELING THE WFV
Ⅲ. MONTE CARLO (MC) SIMULATION
Ⅳ. CONCLUSION
REFERENCES
참고문헌 (4)
참고문헌 신청
1. [학술지(정기간행물)] - H. F. Dadgour / 2010 / Grain-orientation induced work function variation in nanoscale metal-gate transistors—Part I:modeling, analysis, and experimental validation / IEEE Transactions on Electron Devices 57 (10) : 2504 ~ 2514
2. [학술지(정기간행물)] - H. Nam / 2013 / Study of high- κ/metal-gate work-function variation using Rayleigh distribution / IEEE ELECTRON DEVICE LETTERS 34 (4) : 532 ~ 534
3. [학술지(정기간행물)] - C. Shin / 2013 / Impact of using doublepatterning versus single-patterning on threshold voltage variation in quasi-planar tri-gate bulk MOSFETs / IEEE ELECTRON DEVICE LETTERS 34 (5) : 578 ~ 580
4. [기타자료] - / 2010 / Sentaurus user guide, ver. E-2010.12
2. [학술지(정기간행물)] - H. Nam / 2013 / Study of high- κ/metal-gate work-function variation using Rayleigh distribution / IEEE ELECTRON DEVICE LETTERS 34 (4) : 532 ~ 534
3. [학술지(정기간행물)] - C. Shin / 2013 / Impact of using doublepatterning versus single-patterning on threshold voltage variation in quasi-planar tri-gate bulk MOSFETs / IEEE ELECTRON DEVICE LETTERS 34 (5) : 578 ~ 580
4. [기타자료] - / 2010 / Sentaurus user guide, ver. E-2010.12
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