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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전기학회 Journal of Electrical Engineering & Technology Journal of Electrical Engineering & Technology Vol.9 No.2
- 발행연도
- 2014.3
- 수록면
- 649 - 654 (6page)
이용수
초록· 키워드
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In this paper, an analytical model for Surrounding Gate (SG) metal-oxide- semiconductor field effect transistors (MOSFETs) considering quantum effects is presented. To achieve this goal, we have used variational approach for solving the Poission and Schrodinger equations. This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion charge density, threshold voltage, drain current and gate capacitance. The calculated expressions for the above parameters are simple and accurate. This paper also focuses on the gate tunneling issue associated with high dielectric constant. The validity of this model was checked for the devices with different dimensions and bias voltages. The calculated results are compared with the simulation results and they show good agreement.
목차
Abstract
1. Introduction
2. Quantum Modeling
3. Compact Surrounding Gate MOSFET Model
4. Results and Discussions
5. Conclusion
References
참고문헌 (16)
참고문헌 신청
1. [학술지(정기간행물)] - J. He / 2007 / An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with a finite doping body / Semiconductor Science and Technology 22 (6) : 671 ~ 677
2. [학술지(정기간행물)] - A. Son / 2009 / Improved Explicit current-Voltage Model for Long-Channel Undoped Surrounding-Gate Metal Oxide Semiconductor Field Effect Transistor / Journal of Applied Physics 48 : 412 ~ 413
3. [학술대회논문] - Y. Chen / 2001 / A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using An Analytical Model / International Conference on Modeling 1 : 546 ~ 549
4. [학술지(정기간행물)] - D. Jimenez / 2004 / Continuous analytic IV model for surrounding-gate MOSFETs / IEEE Electron Device Letters 25 (8) : 571 ~ 573
5. [학술지(정기간행물)] - J-P. Colinge / 2004 / Multiple-gate SOI MOSFETs / Solid- State Electronics 48 (9) : 897 ~ 905
2. [학술지(정기간행물)] - A. Son / 2009 / Improved Explicit current-Voltage Model for Long-Channel Undoped Surrounding-Gate Metal Oxide Semiconductor Field Effect Transistor / Journal of Applied Physics 48 : 412 ~ 413
3. [학술대회논문] - Y. Chen / 2001 / A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using An Analytical Model / International Conference on Modeling 1 : 546 ~ 549
4. [학술지(정기간행물)] - D. Jimenez / 2004 / Continuous analytic IV model for surrounding-gate MOSFETs / IEEE Electron Device Letters 25 (8) : 571 ~ 573
5. [학술지(정기간행물)] - J-P. Colinge / 2004 / Multiple-gate SOI MOSFETs / Solid- State Electronics 48 (9) : 897 ~ 905
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UCI(KEPA) : I410-ECN-0101-2015-500-001097405