지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
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초록· 키워드
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This paper, we classified LED failure mechanisms that occur due to the delamination and analyzed each of the mechanism that gives the LED PKGs the effect. Usually, the LED is composed of several materials which are LED chips, gold wire, phosphor, epoxy resin, adhesive, reflector and lead frame. These different materials are usually delaminated in trouble conditions which are huge temperature difference, hot and humid or mechanical shocked. When the components are delaminated, a luminance will be lost and moisture be absorbed easily, a thermal resistance be increased attendantly. In this paper, we experimented to investigate failure mechanism of the thermal resistance and failure mechanism of the decrease of luminance that occur due to the delamination. A thermal shock test was performed to reproduce this phenomena by subjecting samples to a cold-hot cyclling process between ?30℃(15min) and 110℃(15min). The samples were inspected at 200, 600 and 1,000 cycles. We measured feature of LED using the spatial analyzer, optical microscope, thermal resistance, photometer, scanning electron microscope (SEM). As a result, the progression of the crack and the thermal resistance and decrease in luminance are proportional to number of thermal shock.
목차
Abstract
1. 서론
2. LED PKG의 박리 메커니즘
3. 박리 재현 시험 및 특성 측정
4. 시험 결과
5. 결론
참고문헌
참고문헌 (6)
참고문헌 신청
2. [기타자료] - 주은철 / 2011 / LED/OLED 최신 산업동향 및 혁신기술 동향분석 / BIR
3. [단행본] - J. Liu / 2009 / Temperature-dependent light-emitting characterisitics of InGaN/GaN diodes / Microelectronics Reliability : 38 ~ 41
4. [학술지(정기간행물)] - L. Yang / 2008 / Thermal Analysis of GaN-Based Light Emitting Diodes With Different Chip Sizes / IEEE Transaction on device and materials reliability 8
5. [학술지(정기간행물)] - M. Meneghini / 2010 / A Review on the Phisical Mechanisms That Limit the Reliability of GaN-Based LEDs / IEEE Transaction on electron device 57 (1)
6. [학술지(정기간행물)] - R. D. Dupuis / 2008 / History, development, and applications of high-brightness visible light-emitting diodes / J. Lightw. Technol. 26 (9) : 1154 ~ 1171
3. [단행본] - J. Liu / 2009 / Temperature-dependent light-emitting characterisitics of InGaN/GaN diodes / Microelectronics Reliability : 38 ~ 41
4. [학술지(정기간행물)] - L. Yang / 2008 / Thermal Analysis of GaN-Based Light Emitting Diodes With Different Chip Sizes / IEEE Transaction on device and materials reliability 8
5. [학술지(정기간행물)] - M. Meneghini / 2010 / A Review on the Phisical Mechanisms That Limit the Reliability of GaN-Based LEDs / IEEE Transaction on electron device 57 (1)
6. [학술지(정기간행물)] - R. D. Dupuis / 2008 / History, development, and applications of high-brightness visible light-emitting diodes / J. Lightw. Technol. 26 (9) : 1154 ~ 1171
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