지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
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초록· 키워드
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Yb-doped ITO (ITO:Yb) films were deposited on unheated non-alkali glass substrates by magnetron cosputtering using two cathodes (DC, RF) equipped with the ITO and Yb₂O₃ target, respectively. The composition of the ITO:Yb films was controlled by adjusting the RF powers from 0 W to 480 W in 120 W steps with the DC power fixed at 70 W. The ITO:Yb films had a higher crystallization temperature (200℃) than that of the ITO films (170℃), which was attributed to both larger ionic radius of Yb<SUP>3+</SUP> and higher bond enthalpy of Yb₂O₃, compared to ITO. This amorphous ITO:Yb film post-annealed at 170℃ showed a resistivity of 5.52 × 10<SUP>?4</SUP> Ωcm, indicating that a introduction of Yb increased resistivity of the ITO film. However, these amorphous ITO:Yb films showed a high etching rate, fine pattering property, and a very smooth surface morphology above the crystallization temperature of the amorphous ITO films (about 170℃). The transmittance of all films was >80% in the visible region.
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Abstract
1. Introduction
2. Experimental Procedure
3. Results and discussion
4. Conclusions
References
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UCI(KEPA) : I410-ECN-0101-2014-581-000613520