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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.12 No.4
- 발행연도
- 2012.12
- 수록면
- 473 - 481 (9page)
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초록· 키워드
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For a mesa-isolated small geometry SOI MOSFET, the potentials in the silicon film, front, back, and side-wall oxide layers can be derived threedimensionally. Using Taylor’s series expansions of the trigonometric functions, the derived potentials are written in terms of the natural length that can be determined by using the derived formula. From the derived 3-D potentials, the minimum values of the front and the back surface potentials are derived and used to obtain the closed-form expressions for the front and back gate threshold voltages as functions of various device parameters and applied bias voltages. Obtained results can be found to explain the draininduced threshold voltage roll-off and the narrow width effect of a fully depleted small geometry SOI MOSFET in a unified manner.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. MODEL FORMULATION
Ⅲ. SAMPLE COMPUTATION AND DISCUSSION
Ⅳ. CONCLUSIONS
ACKNOWLEDGMENTS
REFERENCES
참고문헌 (20)
참고문헌 신청
1. [학술지(정기간행물)] - Lim H / 1983 / Threshold Voltage of Thin- Film Silicon-on-Insulator (SOI) MOSFET's / IEEE Trans. Electron Devices 30 (10) : 1244 ~
2. [학술지(정기간행물)] - Veeraghavan S / 1989 / Short-channel effects in SOI MOSFET's / IEEE Trans. Electron Devices 36 (3) : 522 ~
3. [학술지(정기간행물)] - R. H. Yan / 1992 / Scaling the Si MOSFET: from bulk to SOI to bulk / IEEE Trans. Electron Devices 39 (7) : 1704 ~ 1710
4. [학술지(정기간행물)] - P. Francis / 1994 / Modeling of ultrathin double-gate nMOS/SOItransistors / IEEE Trans. Electron Devices 41 (5) : 715 ~ 720
5. [학술지(정기간행물)] - T. C. Hsiao / 1995 / Subthreshold characteristics of fully depleted submicrometer SOI MOSFET’s / IEEE Trans. Electron Devices 42 (6) : 1120 ~ 1125
2. [학술지(정기간행물)] - Veeraghavan S / 1989 / Short-channel effects in SOI MOSFET's / IEEE Trans. Electron Devices 36 (3) : 522 ~
3. [학술지(정기간행물)] - R. H. Yan / 1992 / Scaling the Si MOSFET: from bulk to SOI to bulk / IEEE Trans. Electron Devices 39 (7) : 1704 ~ 1710
4. [학술지(정기간행물)] - P. Francis / 1994 / Modeling of ultrathin double-gate nMOS/SOItransistors / IEEE Trans. Electron Devices 41 (5) : 715 ~ 720
5. [학술지(정기간행물)] - T. C. Hsiao / 1995 / Subthreshold characteristics of fully depleted submicrometer SOI MOSFET’s / IEEE Trans. Electron Devices 42 (6) : 1120 ~ 1125
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