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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.11 No.2
- 발행연도
- 2011.6
- 수록면
- 111 - 120 (10page)
이용수
초록· 키워드
오류제보하기
A two-dimensional analytical model for deriving the threshold voltage of a short channel fully depleted (FD) cylindrical/surrounding gate MOSFET (CGT/SGT) is suggested. By taking into account the lateral variation of the surface potential, introducing the natural length expression, and using the Bessel functions of the first and the second kinds of order zero, we can derive potentials in the gate oxide layer and the silicon core fully two-dimensionally. Making use of these potentials, the minimum surface potentialcan be obtained to derive the threshold voltage as a closed-form expression in terms of various device parameters and applied voltages. Obtained results can be used to explain the drain-induced threshold voltage roll-off of a CGT/SGT in a unified manner.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. MODEL FORMULATION
Ⅲ. SAMPLE COMPUTATION AND DISCUSSION
Ⅳ. CONCLUSIONS
APPENDIX
REFERENCES
참고문헌 (17)
참고문헌 신청
1. [학술대회논문] - Takato H. / 1998 / High performance CMOS surrounding gate transistor (SGT) for ultra high density LSI’s / IEDM Tech. Dig : 222 ~ 225
2. [학술대회논문] - Sunouchi K. / 1989 / A surrounding gate transistor (SGT) cell 64/256 Mbit DRAMs / IEDM Tech. Dig : 23 ~
3. [학술지(정기간행물)] - Takato H. / 1991 / Impact of surrounding gate transistor (SGT) for ultra high density LSIs / IEEE Trans. Electron Devices 38 : 573 ~ 578
4. [학술지(정기간행물)] - Nitayama H. / 1991 / Multi-pillar surrounding gate transistor (M-SGT) for compact and high speed circuits / IEEE Trans. Electron Devices 38 : 578 ~ 583
5. [학술지(정기간행물)] - Miyano S. / 1992 / Numerical analysis of a cylindrical thin-pillar transistor (CYNTHIA) / IEEE Trans. Electron Devices 39 : 1876 ~ 1881
2. [학술대회논문] - Sunouchi K. / 1989 / A surrounding gate transistor (SGT) cell 64/256 Mbit DRAMs / IEDM Tech. Dig : 23 ~
3. [학술지(정기간행물)] - Takato H. / 1991 / Impact of surrounding gate transistor (SGT) for ultra high density LSIs / IEEE Trans. Electron Devices 38 : 573 ~ 578
4. [학술지(정기간행물)] - Nitayama H. / 1991 / Multi-pillar surrounding gate transistor (M-SGT) for compact and high speed circuits / IEEE Trans. Electron Devices 38 : 578 ~ 583
5. [학술지(정기간행물)] - Miyano S. / 1992 / Numerical analysis of a cylindrical thin-pillar transistor (CYNTHIA) / IEEE Trans. Electron Devices 39 : 1876 ~ 1881
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