지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전기학회 Journal of Electrical Engineering & Technology Journal of Electrical Engineering & Technology Vol.7 No.4
- 발행연도
- 2012.7
- 수록면
- 596 - 600 (5page)
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초록· 키워드
오류제보하기
ZnO-SnO₂ films were deposited by rf magnetron sputtering using a ZnO-SnO₂ (2:1 molar ratio) target. The target was made from a mixture of ZnO and SnO₂ powders calcined at 800℃. The working pressure was 1 mTorr, and the rf power was 120 W. The ratio of oxygen to argon (O₂:Ar) was varied from 0% to 10%, and the substrate temperature was varied from 27℃ to 300℃. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force spectroscopy (AFM). The ZnO-SnO₂ films deposited in O₂:Ar = 10% exhibited resistivity higher than 10? Ωcm and transmittance of more than 80% in the visible range.
목차
Abstract
1. Introduction
2. Experimental Procedure
3. Results and Discussion
4. Conclusion
Acknowledgements
References
참고문헌 (10)
참고문헌 신청
1. [학술지(정기간행물)] - P. Görrn / 2009 / Zinc tin oxide based driver for highly transparent active matrix OLED displays / Solid-State Electron. 53 : 329 ~ 331
2. [학술지(정기간행물)] - R. Navamathavan / 2011 / Effect of NH3 plasma treatment on the device performance of ZnO based thin film transistors / Vacuum 85 : 904 ~ 907
3. [학술지(정기간행물)] - 김진혁 / 200805 / Effect of thickness of ZnO active layer on ZnO-TFT's characteristics / THIN SOLID FILMS 516 (16) : 5597 ~ 5601
4. [학술지(정기간행물)] - R. L. Hoffman / 2006 / Effects of chemical stoichiometry and processing temperature on the electrical characteristics of zinc tin oxide thin-film transistors / Solid-State Electron 50 : 784 ~ 787
5. [학술지(정기간행물)] - W. B. Jackson / 2006 / Zinc tin oxide transistors on flexible substrates / J. Non- Cryst. Solids 352 : 1753 ~ 1755
2. [학술지(정기간행물)] - R. Navamathavan / 2011 / Effect of NH3 plasma treatment on the device performance of ZnO based thin film transistors / Vacuum 85 : 904 ~ 907
3. [학술지(정기간행물)] - 김진혁 / 200805 / Effect of thickness of ZnO active layer on ZnO-TFT's characteristics / THIN SOLID FILMS 516 (16) : 5597 ~ 5601
4. [학술지(정기간행물)] - R. L. Hoffman / 2006 / Effects of chemical stoichiometry and processing temperature on the electrical characteristics of zinc tin oxide thin-film transistors / Solid-State Electron 50 : 784 ~ 787
5. [학술지(정기간행물)] - W. B. Jackson / 2006 / Zinc tin oxide transistors on flexible substrates / J. Non- Cryst. Solids 352 : 1753 ~ 1755
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UCI(KEPA) : I410-ECN-0101-2013-560-002708638