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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
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- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.12 No.1
- 발행연도
- 2012.3
- 수록면
- 66 - 74 (9page)
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In this paper, the impact of segregation layer density (NDSL) and length (LDSL) on scalability and analog/RF performance of dopant-segregated Schottky barrier (DSSB) SOI MOSFET has been investigated in sub-30 nm regime. It has been found that, although by increasing the NDSL the increased off-state leakage, short-channel effects and the parasitic capacitances limits the scalability, the reduced Schottky barrier width at source-to-channel interface improves the analog/RF figures of merit of this device. Moreover, although by reducing the LDSL the increased voltage drop across the underlap length reduces the drive current, the increased effective channel length improves the scalability of this device. Further, the gain-bandwidth product in a commonsource amplifier based on optimized DSSB SOI MOSFET has improved by ~40% over an amplifier based on raised source/drain ultrathin-body SOI MOSFET. Thus, optimizing NDSL and LDSL of DSSB SOI MOSFET makes it a suitable candidate for future nanoscale analog/RF circuits
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. SIMULATION SETUP
Ⅲ. RESULTS AND DISCUSSION
Ⅳ. CONCLUSIONS
REFERENCES
참고문헌 (23)
참고문헌 신청
1. [학술지(정기간행물)] - T. Skotnicki / 2005 / The End of CMOS Scaling: Toward the introduction of new materials and structural changes to improve MOSFET performance / IEEE Circuits Devices Mag 21 (1) : 16 ~ 26
2. [학술지(정기간행물)] - A. Majumdar / 2009 / Gate Length and Performance Scaling of Undoped-body Extreamly Thin SOI MOSFETs / IEEE Electron Device Lett 30 (4) : 413 ~ 415
3. [학술지(정기간행물)] - Z. Zhang / 2004 / Self-align Recessed Source Drain Ultrathin Body SOI MOSFET / IEEE Electron Device Lett 25 (1) : 740 ~ 742
4. [학술지(정기간행물)] - J. M. Larson / 2006 / Overview and Status of Metal S/D Schottky-barrier MOSFET Technology / IEEE Trans. Electron Devices 53 (5) : 1048 ~ 1058
5. [학술지(정기간행물)] - L. Zeng / 2010 / Computational Study of Dopantsegregated Schottky Barrier MOSFETs / IEEE Trans. Nanotechnol 9 (1) : 108 ~ 113
2. [학술지(정기간행물)] - A. Majumdar / 2009 / Gate Length and Performance Scaling of Undoped-body Extreamly Thin SOI MOSFETs / IEEE Electron Device Lett 30 (4) : 413 ~ 415
3. [학술지(정기간행물)] - Z. Zhang / 2004 / Self-align Recessed Source Drain Ultrathin Body SOI MOSFET / IEEE Electron Device Lett 25 (1) : 740 ~ 742
4. [학술지(정기간행물)] - J. M. Larson / 2006 / Overview and Status of Metal S/D Schottky-barrier MOSFET Technology / IEEE Trans. Electron Devices 53 (5) : 1048 ~ 1058
5. [학술지(정기간행물)] - L. Zeng / 2010 / Computational Study of Dopantsegregated Schottky Barrier MOSFETs / IEEE Trans. Nanotechnol 9 (1) : 108 ~ 113
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