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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
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The polishing of silicon wafers has an important role in semiconductor manufacturing. Generally, getting a flat surface such as a mirror is the purpose of the process. The wafer surface roughness is affected by many variables such as the characteristics of the carrier head unit, operation, speed, the pad and slurry temperature.
Optimum process conditions for experimental temperature, pH value, down-force, slurry ratio are investigated, time is used as a fixed factor. This study carried out a series of experiments at varying platen, chuck rpm and oscillation cpm taking particular note of the difference between the rpm and the affect it has on the surface roughness. In this experiment determine the optimum conditions for polishing silicone wafers.
Optimum process conditions for experimental temperature, pH value, down-force, slurry ratio are investigated, time is used as a fixed factor. This study carried out a series of experiments at varying platen, chuck rpm and oscillation cpm taking particular note of the difference between the rpm and the affect it has on the surface roughness. In this experiment determine the optimum conditions for polishing silicone wafers.
목차
ABSTRACT
1. 서론
2. 웨이퍼 폴리싱
3. 실험
4. 실험결과
5. 결론
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참고문헌
참고문헌 (7)
참고문헌 신청
1. [학술지(정기간행물)] - Z.J. Pei / 2002 / A study on surface grinding of 300mm silicon wafers / International Journal of Machine Tools & Manufacture 42 : 385 ~ 393
2. [학술지(정기간행물)] - Jung-Taik Lee / 2009 / A Study on the Characteristics of a Wafer-Polishing Process according to Machining Conditions / International Journal of Precision Engineering and Manufacturing 10 (1) : 23 ~ 28
3. [학술대회논문] - Tae-Hee, Shin / 2008 / A Study on the Characteristics of Surface on the Wafer Polishing according to Machining Velocity and Processing Temperature of Slurry / Transactions of the Korean Society of Machine Tool Engineers 17 (4) : 30 ~ 35
4. [학술지(정기간행물)] - Nam-Hoon Kim / 2005 / Effects of conditioning temperature on polishing pad for oxide chemical mechanical polishing process / Microeletronic Engineering 82 (3-4) : 680 ~ 685
5. [학술지(정기간행물)] - / 2004 / Polishing pad surface characterisation in chemical mechanical planarisation / John McGrath and Chris Davis 153-154 : 666 ~ 673
2. [학술지(정기간행물)] - Jung-Taik Lee / 2009 / A Study on the Characteristics of a Wafer-Polishing Process according to Machining Conditions / International Journal of Precision Engineering and Manufacturing 10 (1) : 23 ~ 28
3. [학술대회논문] - Tae-Hee, Shin / 2008 / A Study on the Characteristics of Surface on the Wafer Polishing according to Machining Velocity and Processing Temperature of Slurry / Transactions of the Korean Society of Machine Tool Engineers 17 (4) : 30 ~ 35
4. [학술지(정기간행물)] - Nam-Hoon Kim / 2005 / Effects of conditioning temperature on polishing pad for oxide chemical mechanical polishing process / Microeletronic Engineering 82 (3-4) : 680 ~ 685
5. [학술지(정기간행물)] - / 2004 / Polishing pad surface characterisation in chemical mechanical planarisation / John McGrath and Chris Davis 153-154 : 666 ~ 673
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UCI(KEPA) : I410-ECN-0101-2013-581-001476643