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논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2009.5
- 수록면
- 51 - 52 (2page)
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초록· 키워드
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In post exposure bake (PEB) process of semiconductor devices production, a shape of critical dimension (CD) could be changed into an inappropriate form by superfluous heating temperature and time of a hot-plate. This is because redundant diffusion of acid can occur from them. In the past, there was little concern about such deformation of CD because the line width of CD that we wanted was relatively thick. However, now we need to control with prudence heating temperature and time of a hot-plate for a thinner line width (ex. sub-32nm) of CD that is used lately. These reasons let us have a desire to start this work.
Here we present a mathematical heat conduction model during PEB process for getting suitable heating temperature and time and compute it by using numerical method.
Computation of the heat conduction is a very delicate matter, especially because of the multiscale conductivity and thickness of stacked sublayers of the wafer. However, through our method we could markedly reduce the unknowns. Thus, our metho ... 전체 초록 보기
Here we present a mathematical heat conduction model during PEB process for getting suitable heating temperature and time and compute it by using numerical method.
Computation of the heat conduction is a very delicate matter, especially because of the multiscale conductivity and thickness of stacked sublayers of the wafer. However, through our method we could markedly reduce the unknowns. Thus, our metho ... 전체 초록 보기
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UCI(KEPA) : I410-ECN-0101-2012-410-003696998