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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.8 No.1
- 발행연도
- 2008.3
- 수록면
- 21 - 26 (6page)
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초록· 키워드
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We fabricated nano-particles of ZnO, In₂O₃ and SnO₂ by using the chemical reaction between metal thin films and polyamic acid. The average size and density of these ZnO, In₂O₃ and SnO₂ nano-particles was approximately 10, 7, and 15 nm, and 2×10¹¹, 6×10¹¹, 2.4×10¹¹ cm<SUP>-2</SUP>, respectively. Then, we fabricated nano-floating gate memory (NFGM) devices with ZnO and In₂O₃ nano-particles embedded in the devices' polyimide dielectrics and silicon dioxide layers as control and tunnel oxides, respectively. We measured the current-voltage characteristics, endurance properties and retention times of the memory devices using a semiconductor parameter analyzer. In the In₂O₃ NFGM, the threshold voltage shift (△V<SUB>T</SUB>) was approximately 5V at the initial state of programming and erasing operations. However, the memory window rapidly decreased after 1000 s from 5 to 1.5 V. The △V<SUB>T</SUB>> of the NFGM containing ZnO was approximately 2 V at the initial state, but the memory window decreased after 1000 s from 2 to 0.4 V. These results mean that metal-oxide nano-particles have feasibility to apply NFGM devices.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. EXPERIMENT
Ⅲ. RESULTS AND DISCUSSIONS
Ⅳ. CONCLUSIONS
ACKNOWLEDGMENTS
REFERENCES
참고문헌 (14)
참고문헌 신청
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2. [학술지(정기간행물)] - H. I. Hanafi / 1996 / Fast and long retention-time nano-crystal memory / IEEE Trans. Electron Devices 43 : 1553 ~ 1558
3. [학술지(정기간행물)] - D. U. Lee / 2007 / Floating gated silicon-insulator nonvolatile memory devices with Au nanoparticles embedded in SiO1.3N insulators by digital sputtering method / Appl. Phys. Lett 90 : 093514 ~
4. [단행본] - A. K. Sharma / 2002 / advanced semiconductor memories, architectures, designs, and application / Wiley- IEEE Press : 596 ~
5. [단행본] - W. D. Brown / 1997 / Nonvolatile semiconductor memory technology, a comprehensive guide to understanding and using NVSM devices / Wiley-IEEE Press : 189 ~
2. [학술지(정기간행물)] - H. I. Hanafi / 1996 / Fast and long retention-time nano-crystal memory / IEEE Trans. Electron Devices 43 : 1553 ~ 1558
3. [학술지(정기간행물)] - D. U. Lee / 2007 / Floating gated silicon-insulator nonvolatile memory devices with Au nanoparticles embedded in SiO1.3N insulators by digital sputtering method / Appl. Phys. Lett 90 : 093514 ~
4. [단행본] - A. K. Sharma / 2002 / advanced semiconductor memories, architectures, designs, and application / Wiley- IEEE Press : 596 ~
5. [단행본] - W. D. Brown / 1997 / Nonvolatile semiconductor memory technology, a comprehensive guide to understanding and using NVSM devices / Wiley-IEEE Press : 189 ~
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