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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 1999.12
- 수록면
- 111 - 114 (4page)
이용수
초록· 키워드
오류제보하기
Numerical calculation for temperature dependence of galvanomagnetic properties of thin bismuth film is pursued. The quasi-two dimensional system is treated in the perturbation formalism of previous study, where realistic screened potential due to impurity is assumed to be the only scattering channel. The potential is separated into pure two dimensional part and the remaining presumed perturbation part. Relaxation time and mobilities for both electron and hole are evaluated, then temperature dependence of the Hall coefficient and magnetoresistance is obtained. The broad minimum of magnetoresistance is manifested, and the interpretation under the kinetic theory is made. Thickness dependence of the quantities are also shown, which are in good agreement with the expected quantum size effect.
목차
Abstract
1. Introduction
3. Formulation
3. Numerical Results
4. Discussion
References
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UCI(KEPA) : I410-ECN-0101-2009-428-015128080