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Hydrogenated amorphous silicon solar cells which are fabricated by photo-chemical vapor deposition (photo-CVD) system has been investigated. In the photo-CVD system which consists of three separate reaction chambers, low-pressure mercury lamp has been used as a light source. The main reactant (Si₂H_6/He) gases which are premixed with a small amount of mercury vapor in a mercury-vaporizer kept at 50℃ have been used.
Using C₂H₂ and SiH₂(CH₃) ₂ as the carbon source, p-type wide band gap a-SiC:H films have been obtained. The result has been found that the undoped layers of the pin/substrate solar cells are influenced by the residual impurities, such as phosphorus and boron during the deposition process. By minimizing the effect of the impurities in the i-layer and optimizing conditions at the p-layer and p/i interface, the energy conversion efficiency of 9.61 % under AM-l (100rnW/C㎡) has been achieved for pin/substrate solar cells illuminated through their p-layers, using the three separate reaction chamber apparatus.
It is expected that a-SiC: H solar cells with the energy conversion efficiency over 10% have been fabricated by Photo-CVD method.
Using C₂H₂ and SiH₂(CH₃) ₂ as the carbon source, p-type wide band gap a-SiC:H films have been obtained. The result has been found that the undoped layers of the pin/substrate solar cells are influenced by the residual impurities, such as phosphorus and boron during the deposition process. By minimizing the effect of the impurities in the i-layer and optimizing conditions at the p-layer and p/i interface, the energy conversion efficiency of 9.61 % under AM-l (100rnW/C㎡) has been achieved for pin/substrate solar cells illuminated through their p-layers, using the three separate reaction chamber apparatus.
It is expected that a-SiC: H solar cells with the energy conversion efficiency over 10% have been fabricated by Photo-CVD method.
목차
Abstract
1. 序論
2. 實驗裝置 및 實驗方法
3. 實驗結果 및 考察
4. 結論
References
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