지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학위논문
- 저자정보
- 지도교수
- 김대경
- 발행연도
- 2023
- 저작권
- 순천대학교 논문은 저작권에 의해 보호받습니다.
이용수12
이 논문의 연구 히스토리 (4)
2023
- 이 논문의 후속연구가 궁금하신가요?
- 연관 학술논문 또는 학술발표를 통해 보다 발전된 연구결과를 확인하실 수 있습니다.
- 이 논문의 연구 히스토리 확인하기
초록· 키워드
오류제보하기
Recently, there has been an increasing demand for DC distribution and energy storage due to environmental issues and carbon-neutral policies. The Dual Active Bridge (DAB) converter is proposed for high-power and high-density power conversion systems, providing the advantage of a simple structure and bidirectional power transfer capability. To achieve efficient power delivery in DAB converters, increasing the switching frequency of the power devices is employed to enhance efficiency and improve power density at higher frequencies.
Active research has focused on applying Wide Band Gap (WBG) power semiconductors to achieve high efficiency and improved power density at high frequencies. The MOSFET possesses parasitic capacitance due to oxide film and PN junction, which affects switching operations and power delivery. Consequently,
it is necessary to analyze the influence of the switch parasitic capacitance on the output of the DAB converter during power conversion.This paper presents an analysis of the influence of the delay time caused by
the parasitic capacitance of SiC MOSFETs on the output of the DAB converter and proposes a method for calculating delay time. Furthermore, the influence on the output is examined when the delay times of the primary-side and secondary-side switches of the DAB converter are unequal, along with the
conditions required to equalize the delay times. Through simulations and experiments, the effects of voltage delay are analyzed and the feasibility of the proposed method is validated.
Active research has focused on applying Wide Band Gap (WBG) power semiconductors to achieve high efficiency and improved power density at high frequencies. The MOSFET possesses parasitic capacitance due to oxide film and PN junction, which affects switching operations and power delivery. Consequently,
it is necessary to analyze the influence of the switch parasitic capacitance on the output of the DAB converter during power conversion.This paper presents an analysis of the influence of the delay time caused by
the parasitic capacitance of SiC MOSFETs on the output of the DAB converter and proposes a method for calculating delay time. Furthermore, the influence on the output is examined when the delay times of the primary-side and secondary-side switches of the DAB converter are unequal, along with the
conditions required to equalize the delay times. Through simulations and experiments, the effects of voltage delay are analyzed and the feasibility of the proposed method is validated.
목차
제 1 장 서 론 ·····························································································11.1 연구 배경 및 필요성 ···················································································11.2 연구 목적 및 내용 ·······················································································3제 2 장 DAB 컨버터 ···············································································52.1 DAB 컨버터 구성 ························································································52.2 DAB 컨버터 동작 원리 ··············································································72.3 MOSFET의 기생 커패시턴스 ·································································152.4 MOSFET의 기생 커패시턴스 영향 ·······················································162.5 기생 커패시터로 인한 지연 시간 ···························································182.6 기생 커패시터로 인한 지연 시간 보상 ·················································212.7 드레인-소스 전압에 따른 기생 커패시턴스 ········································23제 3 장 DAB 컨버터 시뮬레이션 ······················································253.1 시뮬레이션 구성 ·························································································253.2 SiC MOSFET의 기생 커패시터 영향 ··················································283.3 SiC MOSFET의 기생 커패시터로 인한 지연 시간 보상 ················31제 4 장 DAB 컨버터 제작 및 실험 ··················································364.1 DAB 컨버터 구성 ······················································································364.2 DAB 컨버터 제작 ······················································································384.3 DAB 컨버터 실험 구성 ············································································414.4 SiC MOSFET의 기생 커패시터 영향 ··················································434.5 보상 커패시터를 이용한 지연 시간 보상 ·············································464.6 실험 결과 ·····································································································51제 5 장 결 론 ·························································································52참고문헌 ·····································································································54요 지 ·····································································································58
최근 본 자료
댓글(0)
0