목차

Semiconductor devices have achieved low power consumption, high switching speed and high integration. However, this feature makes them susceptible to electromagnetic waves. In addition, the threat of terrorist attacks by high-power electronic bombs, the continuous extension of the frequency band in electronic systems, the increase of electric field amplitude, and the demand for semiconductor devices to be resistant to various electromagnetic environments.
Therefore, in this paper, we analyzed the sensitivity of CMOS IC by high output narrow-band electromagnetic wave. 2.45 GHz magnetron was used as the narrow-band electromagnetic wave source, and a jig was made jig capable of mounting the device inside the waveguide to evaluate the effect of only the device. A 14-pin logic device of HCMOS type was used as the EUT. To evaluate the sensitivity of only the IC, IC was placed inside the waveguide and the verification circuit was placed outside the waveguide. Also, the gate was turned ON and OFF in order to confirm the influence of the initial output of the IC.
Experimental results show that the electric field amplitude of the gate increases, as the probability of malfunction / failure was increased regardless of whether the initial output of the gate is ON or OFF. When the initial output of the gate is ON, the flicker, self-rest appears as malfunction, and the device is destroyed above the electric field that generates self-reset at a probability of 1. When the initial output of the gate is OFF, only flicker was observed as malfunction. Flicker occurred even in a field higher than that of ON. However, destruction occurred at a field amplitude similar to that of ON. GND current was confirmed to analyze the latch-up phenomenon. The GND current appeared only during the electromagnetic radiation, and the amplitude of the peak GND current increased as the electric field intensity increased. Accordinf to the theory, GND current should continue to increase. However, the GND current appears only during field emission because of the design of the diode, capacitor, and other protective circuits to prevent the latch-up phenomenon in the IC design structure. Pin - to - pin resistances (Vcc - GND, Vcc - Input1, Input1 - GND) and input capacitance were measured for the electrical characteristics of IC. Both ICs exposed to electromagnetic waves and ICs that were not exposed showed similar values, but some ICs showed extremely higher or lower values than the normal values. This suggests that the deterioration of IC internal components is present. In the optical microscope analysis of the IC, physical damage was confirmed in all the ICs that malfunction. In ICs showing flicker, self-reset, damage was observed on the trace. However, in the case of the IC showing destruction, damage was confirmed in the whole IC. when the electric field is sufficiently large, the induction current is flowed along the low impedance of the IC, causing thermal destruction.