The line width of the semiconductor devices has become very narrow as devices, in particular, the capacity of memory devices has increased. For Si MOSFET which is one of the typical semiconductor devices, it has inevitably decreased in horizontal and vertical size. According to the trend of nano-sizing transistors of the size of 20 nm have already been developed and fabricated. For transistors, issues called the short channel effect have turned up as the length of the gate become shorter in accordance with miniaturization. As a solution of these issues, a technique of applying silicon epitaxial growth in the areas of the source and drain has been used. In addition, Si or SiGe epitaxy is expected to be the important techniques required as channel materials in the transistors of the size of 10 nm or less (Imai et al., 2008). It is important to mass-produce the semiconductors in order to lower the production cost, which also requires Si epitaxial growth to be performed on several wafers at a time. In this reactor, several wafers are placed on the susceptor which rotates at the constant speed in order to obtain a uniform distribution of temperature and concentrations. There are the so-called satellites on which wafers are placed on top of them, which rotate in the opposite direction to the susceptor during the process. Temperature difference shall be within 1℃ in order to make the epitaxial film uniform in thickness and concentration and the revolution of susceptor and the rotation of satellites are known to play an important roles in maintaining the constant temperature This study analyzed the flow and temperature distribution in the reactor in order to understand the transport phenomena of multi-wafer CVD reactor for Si epitaxy. The revolution of the susceptor and the rotation of satellites were included in the analyses using multiple reference frame. The radiation heat transfer between solids was also considered. The commercial computational fluid dynamics software CFD-ACE+ was used in this study. The multiple-frame-of-reference was used to solve continuity, momentum and energy conservation equations which governed the transport phenomena inside the reactor. Kinetic theory was used to describe the physical properties of gas mixture. Effects of the rotation speed of the satellites was clearly seen when the inlet flow rate was small. Thickness of the boundary layer affected by the satellites rotation became very thin as the flow rate increased. The temperature field on the base was little affected by the incoming flow rate of precursors.